KRA558F
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA558F
Código: HH
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05
W
Tensión colector-emisor (Vce): 20
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TFSV
Búsqueda de reemplazo de transistor bipolar KRA558F
KRA558F
Datasheet (PDF)
9.1. Size:46K kec
kra557u-kra559u.pdf
SEMICONDUCTOR KRA557U~KRA559UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors1 5DIM MILLIMETERS_Simplify Circuit Design A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process_B 2.1 + 0.13 4 D_B1 1.25 + 0.1High Pack
9.2. Size:47K kec
kra557e-kra559e.pdf
SEMICONDUCTOR KRA557E~KRA559ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias ResistorsSimplify Circuit Design1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process_+A1 1.0 0.052_+B 1.6 0.05High Packing Density._+B1 1.2
9.3. Size:67K kec
kra551e-kra556e.pdf
SEMICONDUCTOR KRA551E~KRA556ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._
9.4. Size:67K kec
kra551u-kra556u.pdf
SEMICONDUCTOR KRA551U~KRA556UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1High P
9.5. Size:466K kec
kra551f-kra554f.pdf
SEMICONDUCTOR KRA551F~KRA554FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSReduce a Quantity of Parts and Manufacturing Process._+A 1.0 0.05_+A1 0.7 0.05Thin Fine Pitch Super mini 5 pin Package._+B 1.0 0.
9.6. Size:388K kec
kra557f-kra559f.pdf
SEMICONDUCTOR KRA557F~KRA559FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSReduce a Quantity of Parts and Manufacturing Process._+A 1.0 0.05_+A1 0.7 0.05Thin Fine Pitch Super mini 5 pin Package._+
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.