KRA558F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KRA558F  📄📄 

Código: HH

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 22 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-emisor (Vce): 20 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 120

Encapsulados: TFSV

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KRA558F datasheet

 9.1. Size:46K  kec
kra557u-kra559u.pdf pdf_icon

KRA558F

SEMICONDUCTOR KRA557U KRA559U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors 1 5 DIM MILLIMETERS _ Simplify Circuit Design A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Pack

 9.2. Size:47K  kec
kra557e-kra559e.pdf pdf_icon

KRA558F

SEMICONDUCTOR KRA557E KRA559E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors Simplify Circuit Design 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _ + B1 1.2

 9.3. Size:67K  kec
kra551e-kra556e.pdf pdf_icon

KRA558F

SEMICONDUCTOR KRA551E KRA556E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _

 9.4. Size:67K  kec
kra551u-kra556u.pdf pdf_icon

KRA558F

SEMICONDUCTOR KRA551U KRA556U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High P

Otros transistores... KRA555E, KRA555U, KRA556E, KRA556U, KRA557E, KRA557F, KRA557U, KRA558E, 2SD718, KRA558U, KRA559E, KRA559F, KRA559U, KRA560E, KRA560F, KRA560U, KRA561E