KRA558F Datasheet. Specs and Replacement

Type Designator: KRA558F  📄📄 

SMD Transistor Code: HH

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TFSV

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KRA558F datasheet

 9.1. Size:46K  kec

 kra557u-kra559u.pdf pdf_icon

KRA558F

SEMICONDUCTOR KRA557U KRA559U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors 1 5 DIM MILLIMETERS _ Simplify Circuit Design A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Pack... See More ⇒

 9.2. Size:47K  kec

 kra557e-kra559e.pdf pdf_icon

KRA558F

SEMICONDUCTOR KRA557E KRA559E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors Simplify Circuit Design 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _ + B1 1.2... See More ⇒

 9.3. Size:67K  kec

 kra551e-kra556e.pdf pdf_icon

KRA558F

SEMICONDUCTOR KRA551E KRA556E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _... See More ⇒

 9.4. Size:67K  kec

 kra551u-kra556u.pdf pdf_icon

KRA558F

SEMICONDUCTOR KRA551U KRA556U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High P... See More ⇒

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Detailed specifications: KRA555E, KRA555U, KRA556E, KRA556U, KRA557E, KRA557F, KRA557U, KRA558E, 2SD718, KRA558U, KRA559E, KRA559F, KRA559U, KRA560E, KRA560F, KRA560U, KRA561E

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