KRA558U Todos los transistores

 

KRA558U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KRA558U
   Código: PI
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: USV

 Búsqueda de reemplazo de transistor bipolar KRA558U

 

KRA558U Datasheet (PDF)

 9.1. Size:46K  kec
kra557u-kra559u.pdf pdf_icon

KRA558U

SEMICONDUCTOR KRA557U KRA559U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors 1 5 DIM MILLIMETERS _ Simplify Circuit Design A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Pack

 9.2. Size:47K  kec
kra557e-kra559e.pdf pdf_icon

KRA558U

SEMICONDUCTOR KRA557E KRA559E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors Simplify Circuit Design 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _ + B1 1.2

 9.3. Size:67K  kec
kra551e-kra556e.pdf pdf_icon

KRA558U

SEMICONDUCTOR KRA551E KRA556E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _

 9.4. Size:67K  kec
kra551u-kra556u.pdf pdf_icon

KRA558U

SEMICONDUCTOR KRA551U KRA556U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High P

Otros transistores... KRA555U , KRA556E , KRA556U , KRA557E , KRA557F , KRA557U , KRA558E , KRA558F , 13003 , KRA559E , KRA559F , KRA559U , KRA560E , KRA560F , KRA560U , KRA561E , KRA561F .

History: KRA725E | SLA4052

 

 
Back to Top

 


 
.