All Transistors. KRA558U Datasheet

 

KRA558U Datasheet and Replacement


   Type Designator: KRA558U
   SMD Transistor Code: PI
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: USV
 

 KRA558U Substitution

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KRA558U Datasheet (PDF)

 9.1. Size:46K  kec
kra557u-kra559u.pdf pdf_icon

KRA558U

SEMICONDUCTOR KRA557U~KRA559UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors1 5DIM MILLIMETERS_Simplify Circuit Design A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process_B 2.1 + 0.13 4 D_B1 1.25 + 0.1High Pack

 9.2. Size:47K  kec
kra557e-kra559e.pdf pdf_icon

KRA558U

SEMICONDUCTOR KRA557E~KRA559ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias ResistorsSimplify Circuit Design1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process_+A1 1.0 0.052_+B 1.6 0.05High Packing Density._+B1 1.2

 9.3. Size:67K  kec
kra551e-kra556e.pdf pdf_icon

KRA558U

SEMICONDUCTOR KRA551E~KRA556ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._

 9.4. Size:67K  kec
kra551u-kra556u.pdf pdf_icon

KRA558U

SEMICONDUCTOR KRA551U~KRA556UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1High P

Datasheet: KRA555U , KRA556E , KRA556U , KRA557E , KRA557F , KRA557U , KRA558E , KRA558F , S8050 , KRA559E , KRA559F , KRA559U , KRA560E , KRA560F , KRA560U , KRA561E , KRA561F .

History: GES6015 | KTC3541T | LDTD123YET1G | LMUN2237LT1G | 2SC5232 | BCW90A | CHUMF7GP

Keywords - KRA558U transistor datasheet

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