All Transistors. KRA558U Datasheet

 

KRA558U Datasheet, Equivalent, Cross Reference Search

Type Designator: KRA558U

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: USV

KRA558U Transistor Equivalent Substitute - Cross-Reference Search

 

KRA558U Datasheet (PDF)

5.1. kra557 9u.pdf Size:46K _kec

KRA558U
KRA558U

SEMICONDUCTOR KRA557U~KRA559U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors 1 5 DIM MILLIMETERS _ ·Simplify Circuit Design A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·Reduce a Quantity of Parts and Manufacturing Process _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 ·High Packing

5.2. kra551f-554f.pdf Size:466K _kec

KRA558U
KRA558U

SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS Reduce a Quantity of Parts and Manufacturing Process. _ + A 1.0 0.05 _ + A1 0.7 0.05 Thin Fine Pitch Super mini 5 pin Package. _ + B 1.0 0.05

5.3. kra551 6u.pdf Size:67K _kec

KRA558U
KRA558U

SEMICONDUCTOR KRA551U~KRA556U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ ·Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 ·High Pack

5.4. kra557f-559f.pdf Size:388K _kec

KRA558U
KRA558U

SEMICONDUCTOR KRA557F~KRA559F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS ·Reduce a Quantity of Parts and Manufacturing Process. _ + A 1.0 0.05 _ + A1 0.7 0.05 ·Thin Fine Pitch Super mini 5 pin Package. _ + B 1

5.5. kra557e 559e.pdf Size:47K _kec

KRA558U
KRA558U

SEMICONDUCTOR KRA557E~KRA559E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors Simplify Circuit Design 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _ + B1 1.2 0.

5.6. kra551e 556e.pdf Size:67K _kec

KRA558U
KRA558U

SEMICONDUCTOR KRA551E~KRA556E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 ·High Packing Density. _ +

Datasheet: KRA555U , KRA556E , KRA556U , KRA557E , KRA557F , KRA557U , KRA558E , KRA558F , BC558 , KRA559E , KRA559F , KRA559U , KRA560E , KRA560F , KRA560U , KRA561E , KRA561F .

 


KRA558U
  KRA558U
  KRA558U
 

social 

LIST

Last Update

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |