KRA755U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KRA751F KRA754F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 Thin Fine Pitch Super

SEMICONDUCTOR KRA757E KRA759E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors 1 6 DIM MILLIMETERS Simplify Circuit Design _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing

SEMICONDUCTOR KRA751E KRA756E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packi

SEMICONDUCTOR KRA757U KRA759U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors DIM MILLIMETERS 1 6 _ Simplify Circuit Design A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High P

SEMICONDUCTOR KRA757E KRA759E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors 1 6 DIM MILLIMETERS Simplify Circuit Design _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing Density.

SEMICONDUCTOR KRA751U KRA756U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ Simplify Circuit Design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Hig

SEMICONDUCTOR KRA757F KRA759F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 Thin Fine Pitch Super