Биполярный транзистор KRA755U - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRA755U
Маркировка: PE
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: US6
KRA755U Datasheet (PDF)
kra751f-kra754f.pdf
SEMICONDUCTOR KRA751F~KRA754FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05Thin Fine Pitch Super
kra757e-kra759e.pdf
SEMICONDUCTOR KRA757E~KRA759ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors1 6 DIM MILLIMETERSSimplify Circuit Design _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packing
kra751e-kra756e.pdf
SEMICONDUCTOR KRA751E~KRA756ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6 DIM MILLIMETERSSimplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packi
kra757u-kra759u.pdf
SEMICONDUCTOR KRA757U~KRA759UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias ResistorsDIM MILLIMETERS1 6_Simplify Circuit Design A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process_B 2.1 + 0.13 4 D _B1 1.25 + 0.1High P
kra757e-kra759e 1.pdf
SEMICONDUCTOR KRA757E~KRA759ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors1 6 DIM MILLIMETERSSimplify Circuit Design _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packing Density.
kra751u-kra756u.pdf
SEMICONDUCTOR KRA751U~KRA756UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.DIM MILLIMETERS1 6_Simplify Circuit Design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1Hig
kra757f-kra759f.pdf
SEMICONDUCTOR KRA757F~KRA759FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05Thin Fine Pitch Super
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050