KRC656E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC656E
Código: NF
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TESV
Búsqueda de reemplazo de transistor bipolar KRC656E
KRC656E Datasheet (PDF)
krc651e-krc656e.pdf
SEMICONDUCTOR KRC651E KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _
krc651u-krc656u.pdf
SEMICONDUCTOR KRC651U KRC656U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Pa
krc657u-krc659u.pdf
SEMICONDUCTOR KRC657U KRC659U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ A 2.00 + 0.20 Simplify Circuit Design. 2 _ A1 1.3 + 0.1 _ B 2.1 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.
krc657e-krc659e.pdf
SEMICONDUCTOR KRC657E KRC659E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 5 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _
Otros transistores... KRC653E , KRC653F , KRC653U , KRC654E , KRC654F , KRC654U , KRC655E , KRC655U , MJE350 , KRC656U , KRC657E , KRC657F , KRC657U , KRC658E , KRC658F , KRC658U , KRC659E .
History: KT6134A | U2T822 | KRC886T | KRC834E | KRC821E | KT6133B | KT634A-2
History: KT6134A | U2T822 | KRC886T | KRC834E | KRC821E | KT6133B | KT634A-2
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