KRC826E
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC826E
Código: YF
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TES6
Búsqueda de reemplazo de transistor bipolar KRC826E
KRC826E
Datasheet (PDF)
0.1. Size:72K kec
krc821e-krc826e.pdf 
SEMICONDUCTOR KRC821E~KRC826ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6 DIM MILLIMETERSSimplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packing Densit
8.1. Size:70K kec
krc821u-krc826u.pdf
SEMICONDUCTOR KRC821U~KRC826UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.DIM MILLIMETERS1 6_Simplify Circuit Design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1High
9.1. Size:49K kec
krc827e-krc829e.pdf
SEMICONDUCTOR KRC827E~KRC829EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1FEATURESWith Built-in Bias Resistors.1 6 DIM MILLIMETERS_A 1.6 + 0.05Simplify Circuit Design._A1 1.0 + 0.052 5_B 1.6 + 0.05Reduce a Quantity of Parts and Manufacturing Process._B1 1.2 + 0.05High Packing De
9.2. Size:391K kec
krc827f-krc829f.pdf
SEMICONDUCTOR KRC827F~KRC829FEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES1 6With Built-in Bias Resistors.DIM MILLIMETERSSimplify Circuit Design._2 5+A 1.0 0.05_+A1 0.7 0.05Reduce a Quantity of Parts and Manufacturing Process._+B 1.0 0.053_+High Packing
9.3. Size:512K kec
krc821f-krc824f.pdf
SEMICONDUCTOR KRC821F~KRC824FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05High Packing Density.
9.4. Size:50K kec
krc827u-krc829u.pdf
SEMICONDUCTOR KRC827U~KRC829UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.DIM MILLIMETERS1 6_A 2.00 + 0.20Simplify Circuit Design._2 5 A1 1.3 + 0.1_B 2.1 + 0.1Reduce a Quantity of Parts and Manufacturing Process.3 4 D _B1 1.25 + 0.1High Packin
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
