KRC827F Todos los transistores

 

KRC827F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KRC827F
   Código: NG
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TFS6

 Búsqueda de reemplazo de transistor bipolar KRC827F

 

KRC827F Datasheet (PDF)

 0.1. Size:391K  kec
krc827f-krc829f.pdf

KRC827F
KRC827F

SEMICONDUCTOR KRC827F~KRC829FEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES1 6With Built-in Bias Resistors.DIM MILLIMETERSSimplify Circuit Design._2 5+A 1.0 0.05_+A1 0.7 0.05Reduce a Quantity of Parts and Manufacturing Process._+B 1.0 0.053_+High Packing

 8.1. Size:49K  kec
krc827e-krc829e.pdf

KRC827F
KRC827F

SEMICONDUCTOR KRC827E~KRC829EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1FEATURESWith Built-in Bias Resistors.1 6 DIM MILLIMETERS_A 1.6 + 0.05Simplify Circuit Design._A1 1.0 + 0.052 5_B 1.6 + 0.05Reduce a Quantity of Parts and Manufacturing Process._B1 1.2 + 0.05High Packing De

 8.2. Size:50K  kec
krc827u-krc829u.pdf

KRC827F
KRC827F

SEMICONDUCTOR KRC827U~KRC829UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.DIM MILLIMETERS1 6_A 2.00 + 0.20Simplify Circuit Design._2 5 A1 1.3 + 0.1_B 2.1 + 0.1Reduce a Quantity of Parts and Manufacturing Process.3 4 D _B1 1.25 + 0.1High Packin

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