KRC827F
Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC827F
SMD Transistor Code: NG
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TFS6
KRC827F
Transistor Equivalent Substitute - Cross-Reference Search
KRC827F
Datasheet (PDF)
0.1. Size:391K kec
krc827f-krc829f.pdf
SEMICONDUCTOR KRC827F~KRC829FEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES1 6With Built-in Bias Resistors.DIM MILLIMETERSSimplify Circuit Design._2 5+A 1.0 0.05_+A1 0.7 0.05Reduce a Quantity of Parts and Manufacturing Process._+B 1.0 0.053_+High Packing
8.1. Size:49K kec
krc827e-krc829e.pdf
SEMICONDUCTOR KRC827E~KRC829EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1FEATURESWith Built-in Bias Resistors.1 6 DIM MILLIMETERS_A 1.6 + 0.05Simplify Circuit Design._A1 1.0 + 0.052 5_B 1.6 + 0.05Reduce a Quantity of Parts and Manufacturing Process._B1 1.2 + 0.05High Packing De
8.2. Size:50K kec
krc827u-krc829u.pdf
SEMICONDUCTOR KRC827U~KRC829UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.DIM MILLIMETERS1 6_A 2.00 + 0.20Simplify Circuit Design._2 5 A1 1.3 + 0.1_B 2.1 + 0.1Reduce a Quantity of Parts and Manufacturing Process.3 4 D _B1 1.25 + 0.1High Packin
Datasheet: 2SA1803O
, 2SA1803R
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, 2SA1805
, 2SA1805O
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, TIP42
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, 2SA1810B
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, 2SA1811
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, 2SA1815-3
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