KTX212E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTX212E
Código: BG
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50(12) V
Corriente del colector DC máxima (Ic): 0.1(0.5) A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 320(250) MHz
Capacitancia de salida (Cc): 7.5 pF
Ganancia de corriente contínua (hfe): 20(270)
Paquete / Cubierta: TES6
Búsqueda de reemplazo de transistor bipolar KTX212E
KTX212E Datasheet (PDF)
ktx212e.pdf
KTX212E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 leads.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design. C
ktx212u.pdf
KTX212U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design. C 0
ktx213e.pdf
KTX213E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 leads.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
ktx213u.pdf
KTX213U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design.
Otros transistores... KRX209E , KRX209U , KRX210E , KRX211U , KRX212U , KRX214U , KTX211E , KTX211U , 2SC828 , KTX212U , KTX213E , KTX213U , KTX214E , KTX214U , KTX215U , KRC231M , KRC231S .
History: BDX40-7 | 2SC4272E
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