KTX212E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTX212E 📄📄
Código: BG
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50(12) V
Corriente del colector DC máxima (Ic): 0.1(0.5) A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 320(250) MHz
Capacitancia de salida (Cc): 7.5 pF
Ganancia de corriente contínua (hFE): 20(270)
Encapsulados: TES6
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KTX212E datasheet
ktx212e.pdf
KTX212E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 leads.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design. C
ktx212u.pdf
KTX212U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design. C 0
ktx213e.pdf
KTX213E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 leads.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
ktx213u.pdf
KTX213U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design.
Otros transistores... KRX209E, KRX209U, KRX210E, KRX211U, KRX212U, KRX214U, KTX211E, KTX211U, 2SC828, KTX212U, KTX213E, KTX213U, KTX214E, KTX214U, KTX215U, KRC231M, KRC231S
Parámetros del transistor bipolar y su interrelación.
History: RN1903FE | UN9210S | DWA423 | KT635B | 2SD1192 | AUY34-2
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