KTX213E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTX213E  📄📄 

Código: BH

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50(12) V

Corriente del colector DC máxima (Ic): 0.1(0.5) A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200(260) MHz

Capacitancia de salida (Cc): 6.5 pF

Ganancia de corriente contínua (hFE): 20(270)

Encapsulados: TES6

  📄📄 Copiar 

 Búsqueda de reemplazo de KTX213E

- Selecciónⓘ de transistores por parámetros

 

KTX213E datasheet

 ..1. Size:52K  kec
ktx213e.pdf pdf_icon

KTX213E

KTX213E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 leads.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.

 8.1. Size:52K  kec
ktx213u.pdf pdf_icon

KTX213E

KTX213U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design.

 9.1. Size:817K  kec
ktx211e.pdf pdf_icon

KTX213E

KTX211E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 leads.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit d

 9.2. Size:51K  kec
ktx214e.pdf pdf_icon

KTX213E

KTX214E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 leads.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design. C

Otros transistores... KRX210E, KRX211U, KRX212U, KRX214U, KTX211E, KTX211U, KTX212E, KTX212U, S9018, KTX213U, KTX214E, KTX214U, KTX215U, KRC231M, KRC231S, KRC232M, KRC232S