MMBTH10LT1 Todos los transistores

 

MMBTH10LT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBTH10LT1

Código: 3EM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 650 MHz

Capacitancia de salida (Cc): 0.7 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT-23

 Búsqueda de reemplazo de MMBTH10LT1

- Selecciónⓘ de transistores por parámetros

 

MMBTH10LT1 datasheet

 ..1. Size:123K  onsemi
 mmbth10lt1 mmbth10-4lt1.pdf pdf_icon

MMBTH10LT1

MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 25 Vdc EMITTER Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 3 THERMAL CHARACTERISTICS 1 Character

 ..2. Size:445K  willas
 mmbth10lt1.pdf pdf_icon

MMBTH10LT1

FM120-M WILLAS THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. compliance with RoHS requirements. We declare that the material of product SOD-123H

 ..3. Size:1201K  shenzhen
 mmbth10lt1.pdf pdf_icon

MMBTH10LT1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTH10LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.225 W (Tamb=25 ) 1. 3 Collector current ICM 0.05 A Collector-base voltage V(BR)CBO 30 V Operating and storage junction temperature range Unit mm TJ,

 0.1. Size:88K  motorola
 mmbth10lt1rev0d.pdf pdf_icon

MMBTH10LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTH10LT1/D MMBTH10LT1 VHF/UHF Transistor COLLECTOR NPN Silicon Motorola Preferred Device 3 1 BASE 3 2 1 EMITTER 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc DEVI

MOSTRAR MÁS

Otros transistores... MMBT3906DW1T1 , MMBT3906TT1 , MMBT3906WT1 , MMBT3946DW1T1 , MMBT4403WT1 , MMBT5551DW1T1 , MMBT5551WT1 , MMBTA94LT1 , 2N2222 , H2584 , H2N3904 , H2N3906 , H2N4401 , H2N4403 , H2N5087 , H2N5401 , H2N5551 .

History: 2SC6098-TL-E | NS404A | NS1674

 

 

 

 

↑ Back to Top
.