Справочник транзисторов. MMBTH10LT1

 

Биполярный транзистор MMBTH10LT1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMBTH10LT1
   Маркировка: 3EM
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 650 MHz
   Ёмкость коллекторного перехода (Cc): 0.7 pf
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: SOT-23

 Аналоги (замена) для MMBTH10LT1

 

 

MMBTH10LT1 Datasheet (PDF)

 ..1. Size:123K  onsemi
mmbth10lt1 mmbth10-4lt1.pdf

MMBTH10LT1
MMBTH10LT1

MMBTH10LT1G,MMBTH10-4LT1GVHF/UHF TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 25 VdcEMITTERCollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc3THERMAL CHARACTERISTICS1Character

 ..2. Size:445K  willas
mmbth10lt1.pdf

MMBTH10LT1
MMBTH10LT1

FM120-M WILLASTHRUMMBTH10LT1VHF/UHF TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.compliance with RoHS requirements.We declare that the material of product SOD-123H

 ..3. Size:1201K  shenzhen
mmbth10lt1.pdf

MMBTH10LT1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTH10LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.225 W (Tamb=25) 1. 3 Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range Unit: mm TJ,

 0.1. Size:88K  motorola
mmbth10lt1rev0d.pdf

MMBTH10LT1
MMBTH10LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTH10LT1/DMMBTH10LT1VHF/UHF TransistorCOLLECTORNPN Silicon Motorola Preferred Device31BASE321EMITTER2CASE 318-08, STYLE 6SOT-23 (TO-236AB)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 25 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 3.0 VdcDEVI

 0.2. Size:102K  onsemi
mmbth10lt1g.pdf

MMBTH10LT1
MMBTH10LT1

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

 0.3. Size:151K  onsemi
mmbth10lt1g mmbth10-04lt1g nsvmmbth10lt1g.pdf

MMBTH10LT1
MMBTH10LT1

MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M

 0.4. Size:204K  onsemi
mmbth10lt1g nsvmmbth10lt1g mmbth10-04lt1g.pdf

MMBTH10LT1
MMBTH10LT1

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.5. Size:102K  onsemi
nsvmmbth10lt1g.pdf

MMBTH10LT1
MMBTH10LT1

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top