MMBTH10LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBTH10LT1
SMD Transistor Code: 3EM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT-23
MMBTH10LT1 Transistor Equivalent Substitute - Cross-Reference Search
MMBTH10LT1 Datasheet (PDF)
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTH10LT1/DMMBTH10LT1VHF/UHF TransistorCOLLECTORNPN Silicon Motorola Preferred Device31BASE321EMITTER2CASE 318-08, STYLE 6SOT-23 (TO-236AB)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 25 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 3.0 VdcDEVI
mmbth10lt1g.pdf
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MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
