HM5401 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM5401  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT-89

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HM5401 datasheet

 ..1. Size:44K  hsmc
hm5401.pdf pdf_icon

HM5401

Spec. No. HE9503 HI-SINCERITY Issued Date 1996.04.09 Revised Date 2004.12.21 MICROELECTRONICS CORP. Page No. 1/5 HM5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM5401 is designed for general purpose applications requiring high breakdown voltages. SOT-89 Features High current-emitter breakdown voltage.VCEO=150V(@IC=1mA) Complements to NPN type HM5551 Absolu

 9.1. Size:86K  chenmko
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HM5401

CHENMKO ENTERPRISE CO.,LTD CHM540APAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 25 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

 9.2. Size:108K  chenmko
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HM5401

CHENMKO ENTERPRISE CO.,LTD CHM540ANGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 36 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

Otros transistores... HLB125HE, HM112, HM117, HM2222A, HM2907A, HM3669, HM42, HM44, BC556, HM5551, HM669A, HM6718, HM772, HM772A, HM882, HM92, HM94