HM5401 Datasheet, Equivalent, Cross Reference Search
Type Designator: HM5401
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT-89
HM5401 Transistor Equivalent Substitute - Cross-Reference Search
HM5401 Datasheet (PDF)
hm5401.pdf
Spec. No. : HE9503HI-SINCERITYIssued Date : 1996.04.09Revised Date : 2004.12.21MICROELECTRONICS CORP.Page No. : 1/5HM5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HM5401 is designed for general purpose applications requiring highbreakdown voltages.SOT-89Features High current-emitter breakdown voltage.VCEO=150V(@IC=1mA) Complements to NPN type HM5551Absolu
chm540apagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM540APAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 25 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm540angp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM540ANGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 36 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BLX39
