HM5401 Datasheet. Specs and Replacement
Type Designator: HM5401 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT-89
HM5401 Substitution
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HM5401 datasheet
Spec. No. HE9503 HI-SINCERITY Issued Date 1996.04.09 Revised Date 2004.12.21 MICROELECTRONICS CORP. Page No. 1/5 HM5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM5401 is designed for general purpose applications requiring high breakdown voltages. SOT-89 Features High current-emitter breakdown voltage.VCEO=150V(@IC=1mA) Complements to NPN type HM5551 Absolu... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHM540APAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 25 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHM540ANGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 36 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.... See More ⇒
Detailed specifications: HLB125HE, HM112, HM117, HM2222A, HM2907A, HM3669, HM42, HM44, BC556, HM5551, HM669A, HM6718, HM772, HM772A, HM882, HM92, HM94
Keywords - HM5401 pdf specs
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History: MMST3906 | 2SC5331 | 2SC5443 | KSC3503
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