HM92 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM92
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de transistor bipolar HM92
HM92 Datasheet (PDF)
hm92.pdf
Spec. No. : HE9509HI-SINCERITYIssued Date : 1996.04.09Revised Date : 2004.12.21MICROELECTRONICS CORP.Page No. : 1/4HM92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HM92 is designed for application as a video output to drive color CRT, or as adialer circuit in electronics telephone.SOT-89Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ............
irhm9230.pdf
Provisional Data Sheet No. PD-9.1395I T TI T T T I T Product Summary-200 Volt, 0.8 RAD HARD HEXFET, International Rectifiers P-Channel RAD HARD technologyPart Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltage stabilityand breakdown voltage stability at total radiation doses asIRHM9230 -200V 0.8 -6.5Ahigh as 105 Rads (Si).
irhm9064 irhm9160 irhm9260.pdf
The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426
irhm9250.pdf
PD - 91299CIRHM9250JANSR2N7423RADIATION HARDENED200V, P-CHANNELPOWER MOSFETREF: MIL-PRF-19500/662THRU-HOLE (T0-254AA) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part NumberIRHM9250 100K Rads (Si) 0.315 -14A JANSR2N7423IRHM93250 300K Rads (Si) 0.315 -14A JANSF2N7423International Rectifiers RAD-Hard HEXFET technol-
irhm9150 irhm9250 irhn9150 irhn9250.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U
irhm9260.pdf
PD - 93858IRHM9260JANSR2N7426200V, P-CHANNEL RADIATION HARDENEDREF: MIL-PRF-19500/660 POWER MOSFET RAD-Hard HEXFET TECHNOLOGY THRU-HOLE (TO-254AA)Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9260 100K Rads (Si) 0.160 -27A JANSR2N7426 IRHM93260 300K Rads (Si) 0.160 -27A JANSF2N7426 TO-254AAInternational Rectifiers RAD-Hard
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050