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HM92 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM92
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT-89
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HM92 Datasheet (PDF)

 ..1. Size:37K  hsmc
 hm92.pdf pdf_icon

HM92

Spec. No. : HE9509HI-SINCERITYIssued Date : 1996.04.09Revised Date : 2004.12.21MICROELECTRONICS CORP.Page No. : 1/4HM92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HM92 is designed for application as a video output to drive color CRT, or as adialer circuit in electronics telephone.SOT-89Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ............

 0.1. Size:94K  international rectifier
 irhm9230.pdf pdf_icon

HM92

Provisional Data Sheet No. PD-9.1395I T TI T T T I T Product Summary-200 Volt, 0.8 RAD HARD HEXFET, International Rectifiers P-Channel RAD HARD technologyPart Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltage stabilityand breakdown voltage stability at total radiation doses asIRHM9230 -200V 0.8 -6.5Ahigh as 105 Rads (Si).

 0.2. Size:237K  international rectifier
 irhm9064 irhm9160 irhm9260.pdf pdf_icon

HM92

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426

 0.3. Size:117K  international rectifier
 irhm9250.pdf pdf_icon

HM92

PD - 91299CIRHM9250JANSR2N7423RADIATION HARDENED200V, P-CHANNELPOWER MOSFETREF: MIL-PRF-19500/662THRU-HOLE (T0-254AA) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part NumberIRHM9250 100K Rads (Si) 0.315 -14A JANSR2N7423IRHM93250 300K Rads (Si) 0.315 -14A JANSF2N7423International Rectifiers RAD-Hard HEXFET technol-

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BC337A-16 | 2SC2257A | TV37

 

 
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