HM92 Datasheet. Specs and Replacement

Type Designator: HM92  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT-89

 HM92 Substitution

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HM92 datasheet

 ..1. Size:37K  hsmc

hm92.pdf pdf_icon

HM92

Spec. No. HE9509 HI-SINCERITY Issued Date 1996.04.09 Revised Date 2004.12.21 MICROELECTRONICS CORP. Page No. 1/4 HM92 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM92 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. SOT-89 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............... See More ⇒

 0.1. Size:94K  international rectifier

irhm9230.pdf pdf_icon

HM92

Provisional Data Sheet No. PD-9.1395 I T TI T T T I T Product Summary -200 Volt, 0.8 RAD HARD HEXFET , International Rectifier s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as IRHM9230 -200V 0.8 -6.5A high as 105 Rads (Si).... See More ⇒

 0.2. Size:237K  international rectifier

irhm9064 irhm9160 irhm9260.pdf pdf_icon

HM92

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426... See More ⇒

 0.3. Size:117K  international rectifier

irhm9250.pdf pdf_icon

HM92

PD - 91299C IRHM9250 JANSR2N7423 RADIATION HARDENED 200V, P-CHANNEL POWER MOSFET REF MIL-PRF-19500/662 THRU-HOLE (T0-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9250 100K Rads (Si) 0.315 -14A JANSR2N7423 IRHM93250 300K Rads (Si) 0.315 -14A JANSF2N7423 International Rectifier s RAD-Hard HEXFET technol-... See More ⇒

Detailed specifications: HM44, HM5401, HM5551, HM669A, HM6718, HM772, HM772A, HM882, MPSA42, HM94, HM965, HMBT1015, HMBT1815, HMBT2222A, HMBT2369, HMBT2907A, HMBT3904

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