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HMBT2222A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HMBT2222A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 75 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 300 MHz

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: SOT-23

Búsqueda de reemplazo de transistor bipolar HMBT2222A

 

HMBT2222A Datasheet (PDF)

0.1. hmbt2222a.pdf Size:51K _hsmc

HMBT2222A
HMBT2222A

Spec. No. : HE6822 HI-SINCERITY Issued Date : 1993.06.30 Revised Date :2010.08.06 MICROELECTRONICS CORP. Page No. : 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs

9.1. hmbt2369.pdf Size:38K _hsmc

HMBT2222A
HMBT2222A

Spec. No. : HE6834HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT2369NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT2369 is designed for general purpose switching and amplifierapplications.SOT-23Features Low Collector Saturation Voltage High speed switching TransistorAbsolute Maximum Ratings Maximu

9.2. hmbt2907a.pdf Size:38K _hsmc

HMBT2222A
HMBT2222A

Spec. No. : HE6821HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.08.30MICROELECTRONICS CORP.Page No. : 1/4HMBT2907APNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT2907A is designed for general purpose amplifier and high -speedswitching, medium power switching applications.SOT-23Features Low Collector Saturation Voltage High Speed Switching For C

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