All Transistors. HMBT2222A Datasheet


HMBT2222A Datasheet, Equivalent, Cross Reference Search

Type Designator: HMBT2222A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 300 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-23

HMBT2222A Transistor Equivalent Substitute - Cross-Reference Search


HMBT2222A Datasheet (PDF)

0.1. hmbt2222a.pdf Size:51K _hsmc


Spec. No. : HE6822 HI-SINCERITY Issued Date : 1993.06.30 Revised Date :2010.08.06 MICROELECTRONICS CORP. Page No. : 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs

9.1. hmbt2369.pdf Size:38K _hsmc


Spec. No. : HE6834HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT2369NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT2369 is designed for general purpose switching and amplifierapplications.SOT-23Features Low Collector Saturation Voltage High speed switching TransistorAbsolute Maximum Ratings Maximu

9.2. hmbt2907a.pdf Size:38K _hsmc


Spec. No. : HE6821HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.08.30MICROELECTRONICS CORP.Page No. : 1/4HMBT2907APNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT2907A is designed for general purpose amplifier and high -speedswitching, medium power switching applications.SOT-23Features Low Collector Saturation Voltage High Speed Switching For C

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , D882 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .


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