HSB857D Todos los transistores

 

HSB857D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSB857D
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Ganancia de corriente contínua (hfe): 170
   Paquete / Cubierta: TO-126ML
 

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HSB857D Datasheet (PDF)

 ..1. Size:42K  hsmc
 hsb857d.pdf pdf_icon

HSB857D

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSB857DPNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..........................................................................................

 8.1. Size:43K  hsmc
 hsb857j.pdf pdf_icon

HSB857D

Spec. No. : HJ200101HI-SINCERITYIssued Date : 2001.09.01Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/4HSB857JPNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..........................................................................................

 8.2. Size:41K  hsmc
 hsb857.pdf pdf_icon

HSB857D

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.10.07MICROELECTRONICS CORP.Page No. : 1/4HSB857 / 2SB857PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ....................................................................................

 8.3. Size:44K  cn haohai electr
 hsb857 2sb857.pdf pdf_icon

HSB857D

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.10.07MICROELECTRONICS CORP.Page No. : 1/4HSB857 / 2SB857PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ....................................................................................

MOSTRAR MÁS

Otros transistores... HSA733 , HSB1109 , HSB1109S , HSB649A , HSB649T , HSB772 , HSB772S , HSB857 , 2N2222A , HSB857J , HSC1815 , HSC945 , HSD1609 , HSD1609S , HSD1616A , HSD313 , HSD468 .

History: BD701 | LBC557AP | BC414CP | 2SD2089 | 2N5226 | BD949F | 2N2810A

 

 
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