All Transistors. HSB857D Datasheet

 

HSB857D Datasheet and Replacement


   Type Designator: HSB857D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 170
   Noise Figure, dB: -
   Package: TO-126ML
 

 HSB857D Substitution

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HSB857D Datasheet (PDF)

 ..1. Size:42K  hsmc
 hsb857d.pdf pdf_icon

HSB857D

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSB857DPNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..........................................................................................

 8.1. Size:43K  hsmc
 hsb857j.pdf pdf_icon

HSB857D

Spec. No. : HJ200101HI-SINCERITYIssued Date : 2001.09.01Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/4HSB857JPNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..........................................................................................

 8.2. Size:41K  hsmc
 hsb857.pdf pdf_icon

HSB857D

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.10.07MICROELECTRONICS CORP.Page No. : 1/4HSB857 / 2SB857PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ....................................................................................

 8.3. Size:44K  cn haohai electr
 hsb857 2sb857.pdf pdf_icon

HSB857D

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.10.07MICROELECTRONICS CORP.Page No. : 1/4HSB857 / 2SB857PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ....................................................................................

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History: PMD9001D | CHDTA114EEGP | BUL128FP | 2N591 | 2SA159 | 2N5702 | D882-O-TC2R

Keywords - HSB857D transistor datasheet

 HSB857D cross reference
 HSB857D equivalent finder
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 HSB857D replacement

 

 
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