HSD1616A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSD1616A  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 19 pF

Ganancia de corriente contínua (hFE): 135

Encapsulados: TO-92

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HSD1616A datasheet

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HSD1616A

Spec. No. HE6534 HI-SINCERITY Issued Date 1998.06.01 Revised Date 2003.05.03 MICROELECTRONICS CORP. Page No. 1/5 HSD1616A NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1616A is designed for audio frequency power amplifier and medium speed switching applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...............................

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HSD1616A

Spec. No. HE6606 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features Low frequency high voltage amplifier Complementary pair with HSB1109 TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..............................................

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HSD1616A

Spec. No. HE6515 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.02.15 MICROELECTRONICS CORP. Page No. 1/5 HSD1609S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................

Otros transistores... HSB772S, HSB857, HSB857D, HSB857J, HSC1815, HSC945, HSD1609, HSD1609S, A940, HSD313, HSD468, HSD667A, HSD669A, HSD669AT, HSD879, HSD882, HSD882S