HSD1616A Datasheet, Equivalent, Cross Reference Search
Type Designator: HSD1616A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Package: TO-92
HSD1616A Transistor Equivalent Substitute - Cross-Reference Search
HSD1616A Datasheet (PDF)
0.1. hsd1616a.pdf 
Size:53K _hsmc
Spec. No. : HE6534HI-SINCERITYIssued Date : 1998.06.01Revised Date : 2003.05.03MICROELECTRONICS CORP.Page No. : 1/5HSD1616ANPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD1616A is designed for audio frequency power amplifier and mediumspeed switching applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...............................
9.1. hsd1609.pdf Size:44K _hsmc
Spec. No. : HE6606HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSD1609NPN EPITAXIAL PLANAR TRANSISTORFeatures Low frequency high voltage amplifier Complementary pair with HSB1109TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................................
9.2. hsd1609s.pdf Size:53K _hsmc
Spec. No. : HE6515HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.02.15MICROELECTRONICS CORP.Page No. : 1/5HSD1609SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD1609S is designed for low frequency high voltage amplifier applications,complementary pair with HSB1109S.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...................
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
