CD9011E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CD9011E 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO-92
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CD9011E datasheet
cd9011.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9011 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Power Dissipation PD 400 mW Operating And Storage Junction Tj
cd9015.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD9015 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Operating And Storage J
cd9018.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS ( Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 15 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage 5V IC Collector Current 30 mA PD Power Di
cd9014.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9014 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Operating And Storage J
Otros transistores... CD2383R, CD2383Y, CD8550, CD8550B, CD8550C, CD8550D, CD9011, CD9011D, 2N5551, CD9011F, CD9011G, CD9011H, CD9011I, CD9011J, CD9012, CD9012DEF, CD9012GHI
Parámetros del transistor bipolar y su interrelación.
History: 2N373-33 | KRC112S
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