2N61 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

2N61072N6111SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 321DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNPTO-220silicon transistors in Jedec TO-220 plasticpackage. They are intended for a wide variety ofmedium power switching and linear applications

2N6111SILICON PNP SWITCHING TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORAPPLICATIONS: LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION 32The 2N6111 is an Epitaxial-Base PNP silicon1transistor in Jedec TO-220 plastic package. It isintended for a wide variety of medium powerTO-220switching and linear applications.INTERNAL SCHEMATIC DIA

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

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2N6193LCC4MECHANICAL DATADimensions in mm (inches)PNP SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (0

2N6193ALCC4MECHANICAL DATADimensions in mm (inches)PNP SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (

2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The ASI 2N6199 is Designed for VHF .112x45 A Class C Power Amplifier Applications Cup to 250 MHz. BE EFEATURES:C B PG = 10 dB Typical at 25 W/175 MHz I Load VSWR at Rated Conditions DHJ Omnigold Metallization System G#8-32 UNC-2AF E MA

2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI 2N6166 is Designed to operate in a collector modulated VHF .112x45 LPower Amplifier Applications up to 200 AMHz. E.125 NOM.C FULL RCFEATURES: BE B C = 60 % min. @ 100 W/150 MHz E D PG = 6.0 dB min. @ 100 W/150 MHz F GH Omnigold Metalization Sy

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS 2N6107 PNP2N6292 NPNTO-220Plastic PackageGeneral Purpose Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 80 VCollector Emitter Voltage VCEO 70 VCollector Emitter Voltage (RBE= 100

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N6121, 2N6122, 2N61232N6124, 2N6125, 2N61262N6121, 6122, 6123 NPN PLASTIC POWER TRANSISTORS2N6124, 6125, 6126 PNP PLASTIC POWER TRANSISTORSMedium Power Linear and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDI

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N61012N6101 NPN PLASTIC POWER TRANSISTORMedium Power Linear and Switching Service in Consumer, Automotive,and Industrial ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N61112N6111 PNP PLASTIC POWER TRANSISTORGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3F 3.75

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N61092N6109 PNP PLASTIC POWER TRANSISTORGeneral Purpose Amplifier and Switching ApplicationPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3F 3.75

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION With TO-220 package 2N6102 with short pin APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ra

Data Sheet No. 2C6193Generic Packaged Parts:Chip Type 2C6193Geometry 97002N6190, 2N6191, 2N6192,Polarity PNP2N6193Chip type 2C6193 by Semicoa Semi- Product Summary:conductors provides performanceAPPLICATIONS:similar to these devices.Designed for medium power switching andwide band applications.Part Numbers:2N6190, 2N6191, 2N6192, 2N6193Features: Medium power rating

NPN Power Silicon Transistors2N6193U3Features JANS and JANSR Qualified to MIL-PRF-19500/561 JEDEC resistered 2N6193 Lightweight & Low Power Ideal for Space, Military and Other High Reliability Applications Surface mount U3 (TO-276AA) PackageMaximum RatingsRatings Symbol Value UnitsCollector - Emitter Voltage VCEO 100 VdcCollector - Base Voltage VCBO 100 Vdc

PNP Power Silicon Transistor2N6193Features Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/561 TO-39 (TO-205AD) PackageMaximum RatingsRatings Symbol Value UnitsCollector - Emitter Voltage VCEO 100 VdcCollector - Base Voltage VCBO 100 VdcEmitter - Base Voltage VEBO 6.0 VdcCollector Current IC 5.0 AdcBase Current IB 1.0 AdcTotal Power Dissipation @ TA =

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6124DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -0.6V(Max.)@ I = -1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = -45V(Min)CEO(SUS)Complement to Type 2N6121Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6122DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 0.6V(Max.)@ I = 1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type 2N6125Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6107DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -70V(Min)CEO(SUS)Complement to Type 2N6292Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicati

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6121DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 0.6V(Max.)@ I = 1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 45V(Min)CEO(SUS)Complement to Type 2N6124Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6126DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -0.6V(Max.)@ I = -1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type 2N6123Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6130DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type 2N6133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio

isc Silicon NPN Power Transistor 2N6103DESCRIPTIONDC Current Gain -: h = 15-60@ I = 8AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power liner amplifier andswitching service in consumer ,automotive and industrialapplications.

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6110DESCRIPTIONDC Current Gain-: h = 30-150@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier and switchingcircuits applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6124 2N6125 2N6126 DESCRIPTION With TO-220 package Complement to PNP type : 2N6121 ;2N6122 ;2N6123 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION With TO-220 package 2N6102 type with short pin APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CON

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6121 2N6122 2N6123 DESCRIPTION With TO-220 package Complement to PNP type : 2N6124 ;2N6125 ;2N6126 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6106DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -70V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=2

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6131DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type 2N6134Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio

isc Silicon NPN Power Transistor 2N6101DESCRIPTIONDC Current Gain -: h = 20-80@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 70V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power liner amplifier andswitching service in consumer ,automotive and industrialapplications.

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6111DESCRIPTIONDC Current Gain-: h = 30-150@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6129DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Complement to Type 2N6132Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6123DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 0.6V(Max.)@ I = 1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type 2N6126Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and

isc Silicon PNP Power Transistor 2N6108DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6132DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)CEO(SUS)Complement to Type 2N6129Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6109DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATIN

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 B

isc Silicon NPN Power Transistor 2N6102DESCRIPTIONDC Current Gain -: h = 20-80@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

isc Silicon NPN Power Transistor 2N6100DESCRIPTIONDC Current Gain -: h = 20-80@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 70V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6125DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -0.6V(Max.)@ I = -1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type 2N6122Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier a

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6133DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type 2N6130Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6134DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type 2N6131Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica