2N61 - описание и поиск аналогов

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in general purpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30 150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All

2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTORS APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP TO-220 silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications

2N6111 SILICON PNP SWITCHING TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 3 2 The 2N6111 is an Epitaxial-Base PNP silicon 1 transistor in Jedec TO-220 plastic package. It is intended for a wide variety of medium power TO-220 switching and linear applications. INTERNAL SCHEMATIC DIA

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

A A A A

2N6193LCC4 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (0

2N6193ALCC4 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (

2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380" 4L STUD The ASI 2N6199 is Designed for VHF .112x45 A Class C Power Amplifier Applications C up to 250 MHz. B E E FEATURES C B PG = 10 dB Typical at 25 W/175 MHz I Load VSWR at Rated Conditions D H J Omnigold Metallization System G #8-32 UNC-2A F E MA

2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .500 4L FLG The ASI 2N6166 is Designed to operate in a collector modulated VHF .112x45 L Power Amplifier Applications up to 200 A MHz. E .125 NOM. C FULL R C FEATURES B E B C = 60 % min. @ 100 W/150 MHz E D PG = 6.0 dB min. @ 100 W/150 MHz F G H Omnigold Metalization Sy

Boca Semiconductor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Plastic Package General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 80 V Collector Emitter Voltage VCEO 70 V Collector Emitter Voltage (RBE= 100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 2N6121, 6122, 6123 NPN PLASTIC POWER TRANSISTORS 2N6124, 6125, 6126 PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DI

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6101 2N6101 NPN PLASTIC POWER TRANSISTOR Medium Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6111 2N6111 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6109 2N6109 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION With TO-220 package 2N6102 with short pin APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ra

Data Sheet No. 2C6193 Generic Packaged Parts Chip Type 2C6193 Geometry 9700 2N6190, 2N6191, 2N6192, Polarity PNP 2N6193 Chip type 2C6193 by Semicoa Semi- Product Summary conductors provides performance APPLICATIONS similar to these devices. Designed for medium power switching and wide band applications. Part Numbers 2N6190, 2N6191, 2N6192, 2N6193 Features Medium power rating

NPN Power Silicon Transistors 2N6193U3 Features JANS and JANSR Qualified to MIL-PRF-19500/561 JEDEC resistered 2N6193 Lightweight & Low Power Ideal for Space, Military and Other High Reliability Applications Surface mount U3 (TO-276AA) Package Maximum Ratings Ratings Symbol Value Units Collector - Emitter Voltage VCEO 100 Vdc Collector - Base Voltage VCBO 100 Vdc

PNP Power Silicon Transistor 2N6193 Features Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/561 TO-39 (TO-205AD) Package Maximum Ratings Ratings Symbol Value Units Collector - Emitter Voltage VCEO 100 Vdc Collector - Base Voltage VCBO 100 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Collector Current IC 5.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TA =

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6124 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -45V(Min) CEO(SUS) Complement to Type 2N6121 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6122 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type 2N6125 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6107 DESCRIPTION DC Current Gain- h = 30-150@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -70V(Min) CEO(SUS) Complement to Type 2N6292 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applicati

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6121 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 45V(Min) CEO(SUS) Complement to Type 2N6124 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6126 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type 2N6123 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6130 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type 2N6133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio

isc Silicon NPN Power Transistor 2N6103 DESCRIPTION DC Current Gain - h = 15-60@ I = 8A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications.

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6110 DESCRIPTION DC Current Gain- h = 30-150@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6124 2N6125 2N6126 DESCRIPTION With TO-220 package Complement to PNP type 2N6121 ;2N6122 ;2N6123 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION With TO-220 package 2N6102 type with short pin APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CON

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6121 2N6122 2N6123 DESCRIPTION With TO-220 package Complement to PNP type 2N6124 ;2N6125 ;2N6126 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6106 DESCRIPTION DC Current Gain- h = 30-150@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -70V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6131 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type 2N6134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio

isc Silicon NPN Power Transistor 2N6101 DESCRIPTION DC Current Gain - h = 20-80@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications.

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6111 DESCRIPTION DC Current Gain- h = 30-150@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6129 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Complement to Type 2N6132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6123 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type 2N6126 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and

isc Silicon PNP Power Transistor 2N6108 DESCRIPTION DC Current Gain- h = 30-150@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6132 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min) CEO(SUS) Complement to Type 2N6129 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6109 DESCRIPTION DC Current Gain- h = 30-150@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATIN

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 B

isc Silicon NPN Power Transistor 2N6102 DESCRIPTION DC Current Gain - h = 20-80@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

isc Silicon NPN Power Transistor 2N6100 DESCRIPTION DC Current Gain - h = 20-80@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6125 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type 2N6122 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6133 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type 2N6130 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6134 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type 2N6131 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica