2N61 Specs and Replacement
Type Designator: 2N61
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.4 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO5
2N61 Substitution
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2N61 datasheet
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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6124 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -45V(Min) CEO(SUS) Complement to Type 2N6121 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6122 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type 2N6125 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and ... See More ⇒
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6121 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 45V(Min) CEO(SUS) Complement to Type 2N6124 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and ... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6126 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type 2N6123 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6130 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type 2N6133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio... See More ⇒
isc Silicon NPN Power Transistor 2N6103 DESCRIPTION DC Current Gain - h = 15-60@ I = 8A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications.... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6110 DESCRIPTION DC Current Gain- h = 30-150@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6124 2N6125 2N6126 DESCRIPTION With TO-220 package Complement to PNP type 2N6121 ;2N6122 ;2N6123 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION With TO-220 package 2N6102 type with short pin APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CON... See More ⇒
2n6098 2n6099 2n6100 2n6101.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PA... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6121 2N6122 2N6123 DESCRIPTION With TO-220 package Complement to PNP type 2N6124 ;2N6125 ;2N6126 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6106 DESCRIPTION DC Current Gain- h = 30-150@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -70V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=2... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6131 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type 2N6134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio... See More ⇒
isc Silicon NPN Power Transistor 2N6101 DESCRIPTION DC Current Gain - h = 20-80@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications.... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6111 DESCRIPTION DC Current Gain- h = 30-150@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6129 DESCRIPTION DC Current Gain- h = 20-100@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Complement to Type 2N6132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching circuits applicatio... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6123 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 0.6V(Max.)@ I = 1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type 2N6126 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and ... See More ⇒
isc Silicon PNP Power Transistor 2N6108 DESCRIPTION DC Current Gain- h = 30-150@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6132 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min) CEO(SUS) Complement to Type 2N6129 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6109 DESCRIPTION DC Current Gain- h = 30-150@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATIN... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 B... See More ⇒
isc Silicon NPN Power Transistor 2N6102 DESCRIPTION DC Current Gain - h = 20-80@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o... See More ⇒
isc Silicon NPN Power Transistor 2N6100 DESCRIPTION DC Current Gain - h = 20-80@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6125 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -0.6V(Max.)@ I = -1.5A CE(sat) C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type 2N6122 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier a... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6133 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type 2N6130 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6134 DESCRIPTION DC Current Gain- h = 20-100@ I = -2.5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type 2N6131 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applica... See More ⇒
Detailed specifications: 2N6095, 2N6096, 2N6097, 2N6098, 2N6099, 2N60A, 2N60B, 2N60C, BDT88, 2N610, 2N6100, 2N6101, 2N6102, 2N6103, 2N6104, 2N6105, 2N6106
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