CMBT5551 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMBT5551  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT-23

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CMBT5551 datasheet

 ..1. Size:324K  cdil
 cmbt5551.pdf pdf_icon

CMBT5551

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N P N HIGH VOLTAGE TRANSISTOR N P N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector base voltage (open emitter) VCBO max. 180 V Collector emitter voltage

 7.1. Size:162K  cdil
 cmbt5550.pdf pdf_icon

CMBT5551

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N P N HIGH VOLTAGE TRANSISTOR N P N transistor Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector base voltage (open emitter) VCBO max. 160 V Collector emitter voltage

 9.1. Size:221K  cdil
 cmbt5088 89.pdf pdf_icon

CMBT5551

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N P N transistors PACKAGE OUTLINE DETAILS Marking ALL DIMENSIONS IN mm CMBT5088 = 1Q CMBT5089 = 1R Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS 5088 5089 Colle

 9.2. Size:162K  cdil
 cmbt5401.pdf pdf_icon

CMBT5551

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P N P HIGH VOLTAGE TRANSISTOR P N P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector base voltage (open emitter) VCBO max. 160 V Collector emitter volt

MOSTRAR MÁS

Otros transistores... CMBT4401, CMBT4403, CMBT5087, CMBT5088, CMBT5089, CMBT5400, CMBT5401, CMBT5550, 2SA1015, CMBT6517, CMBT6520, CMBT8050, CMBT8050C, CMBT8050D, CMBT8050E, CMBT8098, CMBT8099