CMBT5551 Todos los transistores

 

CMBT5551 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CMBT5551
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT-23
     - Selección de transistores por parámetros

 

CMBT5551 Datasheet (PDF)

 ..1. Size:324K  cdil
 cmbt5551.pdf pdf_icon

CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5551SILICON NPN HIGHVOLTAGE TRANSISTORNPN transistorMarkingCMBT5551 = G1Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 180 VCollectoremitter voltage

 7.1. Size:162K  cdil
 cmbt5550.pdf pdf_icon

CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5550SILICON NPN HIGHVOLTAGE TRANSISTORNPN transistorMarkingCMBT5550 = 1FPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter voltage

 9.1. Size:221K  cdil
 cmbt5088 89.pdf pdf_icon

CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT5088CMBT5089NPN SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsPACKAGE OUTLINE DETAILSMarking ALL DIMENSIONS IN mmCMBT5088 = 1QCMBT5089 = 1RPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGS5088 5089Colle

 9.2. Size:162K  cdil
 cmbt5401.pdf pdf_icon

CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5401SILICON PNP HIGHVOLTAGE TRANSISTORPNP transistorMarkingCMBT5401 = 2LPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter volt

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FT3055 | DTA024EEB | ZTX454 | DMC56603 | 2SA622 | BF393

 

 
Back to Top

 


 
.