All Transistors. CMBT5551 Datasheet

 

CMBT5551 Datasheet, Equivalent, Cross Reference Search


   Type Designator: CMBT5551
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-23

 CMBT5551 Transistor Equivalent Substitute - Cross-Reference Search

   

CMBT5551 Datasheet (PDF)

 ..1. Size:324K  cdil
cmbt5551.pdf

CMBT5551
CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5551SILICON NPN HIGHVOLTAGE TRANSISTORNPN transistorMarkingCMBT5551 = G1Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 180 VCollectoremitter voltage

 7.1. Size:162K  cdil
cmbt5550.pdf

CMBT5551
CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5550SILICON NPN HIGHVOLTAGE TRANSISTORNPN transistorMarkingCMBT5550 = 1FPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter voltage

 9.1. Size:221K  cdil
cmbt5088 89.pdf

CMBT5551
CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT5088CMBT5089NPN SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsPACKAGE OUTLINE DETAILSMarking ALL DIMENSIONS IN mmCMBT5088 = 1QCMBT5089 = 1RPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGS5088 5089Colle

 9.2. Size:162K  cdil
cmbt5401.pdf

CMBT5551
CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5401SILICON PNP HIGHVOLTAGE TRANSISTORPNP transistorMarkingCMBT5401 = 2LPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 160 VCollectoremitter volt

 9.3. Size:162K  cdil
cmbt5400.pdf

CMBT5551
CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT5400HIGH VOLTAGE TRANSISTORPNP transistorMarkingCMBT5400 = K2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 130 VCollectoremitter voltage (open base) V

 9.4. Size:145K  cdil
cmbt5087.pdf

CMBT5551
CMBT5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT5087SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorMarkingCMBT5087= 2QPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollector-base voltage (open emitter) VCBO max. 50 VCollector-emitter voltage (open base) VCEO ma

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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