CMBT847G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMBT847G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar CMBT847G
CMBT847G Datasheet (PDF)
cmbt847.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847SOT23PIN CONFIGURATION (NPN)1 = BASE2 = EMITTER3 = COLLECTOR3MARKING: AS BELOW12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 50 VCollector -Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO
cmbt8098 99.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS CMBT8098CMBT8099PIN CONFIGURATION (NPN)1 = BASE2 = EMITTERSOT-233 = COLLECTOR3Formed SMD Package12MarkingCMBT8098- KACMBT8099- KBABSOLUTE MAXIMUM RATINGDESCRIPTION SYMBOL CMBT8098 CMBT8099 UNITSCollector Base Voltage VCBO 60 80 V
cmbt8550 c d e.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8550 PIN CONFIGURATION (PNP)SOT-231 = BASE2 = EMITTER3 = COLLECTOR Formed SMD Package312ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 25 VEmitter Base Voltage V
cmbt8050.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN)1 = BASESOT-232 = EMITTER3 = COLLECTOR3Formed SMD Package12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 25 VEmitter Base Voltage
cmbt857.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857PIN CONFIGURATION (PNP)SOT231 = BASE2 = EMITTER3 = COLLECTOR3MARKING: AS BELOW12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO
cmbt8598 99.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT8598CMBT8599GENERAL PURPOSE TRANSISTORPNP transistorMarking PACKAGE OUTLINE DETAILSCMBT8598 = 2K ALL DIMENSIONS IN mmCMBT8599 = 2WPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT 8598 8599Collectorbas
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
