All Transistors. CMBT847G Datasheet

 

CMBT847G Datasheet, Equivalent, Cross Reference Search


   Type Designator: CMBT847G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: SOT-23

 CMBT847G Transistor Equivalent Substitute - Cross-Reference Search

   

CMBT847G Datasheet (PDF)

 7.1. Size:131K  cdil
cmbt847.pdf

CMBT847G
CMBT847G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847SOT23PIN CONFIGURATION (NPN)1 = BASE2 = EMITTER3 = COLLECTOR3MARKING: AS BELOW12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 50 VCollector -Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO

 9.1. Size:299K  cdil
cmbt8098 99.pdf

CMBT847G
CMBT847G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS CMBT8098CMBT8099PIN CONFIGURATION (NPN)1 = BASE2 = EMITTERSOT-233 = COLLECTOR3Formed SMD Package12MarkingCMBT8098- KACMBT8099- KBABSOLUTE MAXIMUM RATINGDESCRIPTION SYMBOL CMBT8098 CMBT8099 UNITSCollector Base Voltage VCBO 60 80 V

 9.2. Size:276K  cdil
cmbt8550 c d e.pdf

CMBT847G
CMBT847G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8550 PIN CONFIGURATION (PNP)SOT-231 = BASE2 = EMITTER3 = COLLECTOR Formed SMD Package312ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 25 VEmitter Base Voltage V

 9.3. Size:132K  cdil
cmbt8050.pdf

CMBT847G
CMBT847G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN)1 = BASESOT-232 = EMITTER3 = COLLECTOR3Formed SMD Package12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 25 VEmitter Base Voltage

 9.4. Size:128K  cdil
cmbt857.pdf

CMBT847G
CMBT847G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857PIN CONFIGURATION (PNP)SOT231 = BASE2 = EMITTER3 = COLLECTOR3MARKING: AS BELOW12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO

 9.5. Size:275K  cdil
cmbt8598 99.pdf

CMBT847G
CMBT847G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT8598CMBT8599GENERAL PURPOSE TRANSISTORPNP transistorMarking PACKAGE OUTLINE DETAILSCMBT8598 = 2K ALL DIMENSIONS IN mmCMBT8599 = 2WPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT 8598 8599Collectorbas

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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