CN1 Todos los transistores

 

CN1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CN1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 12 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 4.5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO-92

Búsqueda de reemplazo de transistor bipolar CN1

 

CN1 Datasheet (PDF)

1.1. ipd64cn10ng ipu64cn10ng.pdf Size:781K _1

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 $ " " $( " " ® $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS S ( 5:3@@7> @AD?3> >7H7> 64 m DS(on) max S J57>>7@F 93F7 5:3D97 J BDA6G5F !) ' DS(on) 17 A D S 07DK >AI A@ D7E;EF3@57 DS(on) S V AB7D3F;@9 F7?B7D3FGD7 S *4 8D77 >736 B>3F;@9 , A#- 5A?B>;3@F 1) S + G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D

1.2. ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf Size:704K _infineon

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IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 34 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 27 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified accordi

 1.3. ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf Size:623K _infineon

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IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC

1.4. ipp64cn10n2.pdf Size:781K _infineon

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 $ " " $( " " ® $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS S ( 5:3@@7> @AD?3> >7H7> 64 m DS(on) max S J57>>7@F 93F7 5:3D97 J BDA6G5F !) ' DS(on) 17 A D S 07DK >AI A@ D7E;EF3@57 DS(on) S V AB7D3F;@9 F7?B7D3FGD7 S *4 8D77 >736 B>3F;@9 , A#- 5A?B>;3@F 1) S + G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D

 1.5. ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf Size:707K _infineon

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IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 25 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 35 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified accordi

1.6. ipb34cn10n ipd33cn10n ipi35cn10n ipp35cn10n.pdf Size:854K _infineon

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IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO252) 33 mW • Excellent gate charge x R product (FOM) DS(on) ID 27 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) f

1.7. ipp16cn10l1.pdf Size:545K _infineon

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 %% # ! ® % (>.;?6?@<> %><1A0@ 'A::.>E Features 1 D S ) 5:3@@7> >A9;5 >7H7> 1 7 m . A@ ?3J S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 4 D S 07DK >AI A@ D7E;EF3@57 D n) S V AB7D3F;@9 F7?B7D3FGD7 S +4 8D77 >736 B>3F;@9 - A#. 5A?B>;3@F 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D75F;8;53F;A@ Type

1.8. ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf Size:519K _infineon

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IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 6.2 mΩ DS(on),max (TO263) • Excellent gate charge x R product (FOM) DS(on) I 100 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target

1.9. ipp08cn10l1.pdf Size:515K _infineon

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IPP08CN10L G ® 2 Power-Transistor Product Summary Features V 100 V DS • N-channel, logic level R 8 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 98 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency

1.10. ipp06cn10l1.pdf Size:545K _infineon

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 %% # ! ® % (>.;?6?@<> %><1A0@ 'A::.>E Features 1 D S ) 5:3@@7> >A9;5 >7H7> m . A@ ?3J S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 1 D S 07DK >AI A@ D7E;EF3@57 D n) S V AB7D3F;@9 F7?B7D3FGD7 S +4 8D77 >736 B>3F;@9 - A#. 5A?B>;3@F 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D75F;8;53F;A@ pe $++

1.11. ipp04cn10n .pdf Size:874K _infineon

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IPB04CN10N G IPI04CN10N G IPP04CN10N G ™ 2 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E4

1.12. ipb79cn10n-g ipd78cn10n-g ipi80cn10n-g ipp80cn10n-g.pdf Size:534K _infineon

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IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS™2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 78 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 13 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC

1.13. ipp06cn10n.pdf Size:770K _infineon

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IPB06CN10N G IPI06CN10N G IPP06CN10N G ™ 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 6.2 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D:DE2?46 R DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7

1.14. ipb12cn10ng ipi12cn10ng.pdf Size:858K _infineon

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IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO252) 12.4 mW • Excellent gate charge x R product (FOM) DS(on) ID 67 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1)

1.15. ipp12cn10l-g ips12cn10l-g.pdf Size:614K _infineon

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IPS12CN10L G IPP12CN10L G OptiMOS®2 Power-Transistor Product Summary Features VDS 100 V • N-channel, logic level RDS(on),max 12 mW • Excellent gate charge x R product (FOM) DS(on) ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high

1.16. ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf Size:781K _infineon

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IPB05CN10N G IPI05CN10N G IPP05CN10N G ™ 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D:DE2?46 R DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7

1.17. ipb04cn10ng ipi04cn10n ipp04cn10n.pdf Size:871K _infineon

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IPB04CN10N G IPI04CN10N G IPP04CN10N G ™ 2 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E4

1.18. ipp08cn10n8.pdf Size:750K _infineon

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 $ " " $ " " $$ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 A D R /6CJ =@H @? C6D:DE2?46 DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@

1.19. ipb16cn10n ipd16cn10n ipi16cn10n ipp16cn10n.pdf Size:661K _infineon

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www.DataSheet4U.com IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 16 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 53 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified

1.20. ipp05cn10l2.pdf Size:563K _infineon

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 %% # ! ® % (>.;?6?@<> %><1A0@ 'A::.>E Features 1 D U ) 7<5BB9@ @C;=7 @9J9@ 1 m D n) m x U L79@@9BH ;5H9 7<5F;9 L D n) DFC8I7H !* ( 1 D U 09FM @CK CB F9G=GH5B79 D n) U X CD9F5H=B; H9AD9F5HIF9 U +6 :F99 @958 D@5H=B; - C#. 7CAD@=5BH 1) U , I5@=:=98 577CF8=B; HC % :CF H5F;9H 5DD@=75H=CB U $895@ :CF <=;< :F9EI9B7M GK=H7<=B; 5B8 GMB71.21. ipb50cn10ng ipd49cn10ng ipi50cn10ng ipp50cn10ng.pdf Size:902K _infineon

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 $ " " $ " " $ " " $$ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 1 D S ) 5:3@@7> @AD?3> >7H7> 4 m . A@ ?3J /* S !J57>>7@F 93F7 5:3D97 J BDA6G5F "* ( D n) D S 07DK >AI A@ D7E;EF3@57 D n) S V AB7D3F;@9 F7?B7D3FGD7 S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F 1) S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@ S %673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE

1.22. ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf Size:705K _infineon

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IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 78 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 13 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified accordi

1.23. cn1933.pdf Size:113K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1933 (9AW) TO-220 MARKING: CN 1933 Low Freq. Power Amp. Built in Damper Diode Complementry CP1342 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 80 V Emitte

1.24. cn107.pdf Size:85K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CN 107 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6.0 V Collector Current Continuous IC 100 mA Peak ICM 200 mA Total Power Dissipation

1.25. cn1016.pdf Size:65K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1016 (9AW) TO-3P MARKING:- CN 1016 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 160 V Collector -Emitter Voltage VCEO 150 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 10 A Peak t=30m

1.26. cn1 cp4.pdf Size:253K _cdil

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Q Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CN 1 CP4 TO-92 Plastic Package Audio Frequency General Purpose and Driver Stage Amplofier Application for Transistor Radios. Complementary CP 4 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT BVCEO Collector Emit

1.27. ipp05cn10n.pdf Size:245K _inchange_semiconductor

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isc N-Channel MOSFET Transistor IPP05CN10N,IIPP05CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

1.28. ipp04cn10n.pdf Size:246K _inchange_semiconductor

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NCHANGE Semicon Iductor isc N-Channel MOSFET Transistor IPP04CN10N,IIPP04CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MA

1.29. ipb34cn10n.pdf Size:258K _inchange_semiconductor

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Isc N-Channel MOSFET Transistor IPB34CN10N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

1.30. ipb79cn10ng.pdf Size:258K _inchange_semiconductor

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Isc N-Channel MOSFET Transistor IPB79CN10NG ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

1.31. ipp35cn10n.pdf Size:246K _inchange_semiconductor

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP35CN10N,IIPP35CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.035Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MA

1.32. ipp16cn10n.pdf Size:245K _inchange_semiconductor

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isc N-Channel MOSFET Transistor IPP16CN10N,IIPP16CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

1.33. ipp80cn10n.pdf Size:246K _inchange_semiconductor

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP80CN10N,IIPP80CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.08Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAX

1.34. ipp26cn10n.pdf Size:246K _inchange_semiconductor

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP26CN10N,IIPP26CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤26mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXI

1.35. ipb26cn10n.pdf Size:258K _inchange_semiconductor

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Isc N-Channel MOSFET Transistor IPB26CN10N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

1.36. ipb05cn10n.pdf Size:257K _inchange_semiconductor

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Isc N-Channel MOSFET Transistor IPB05CN10N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

1.37. ipd25cn10n.pdf Size:242K _inchange_semiconductor

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isc N-Channel MOSFET Transistor IPD25CN10N,IIPD25CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

1.38. ipd78cn10n.pdf Size:243K _inchange_semiconductor

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isc N-Channel MOSFET Transistor IPD78CN10N,IIPD78CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

1.39. ipb12cn10ng.pdf Size:258K _inchange_semiconductor

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Isc N-Channel MOSFET Transistor IPB12CN10NG ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

1.40. ipp12cn10n.pdf Size:246K _inchange_semiconductor

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP12CN10N,IIPP12CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MA

1.41. ipb04cn10ng.pdf Size:257K _inchange_semiconductor

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Isc N-Channel MOSFET Transistor IPB04CN10NG ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

1.42. ipd33cn10n.pdf Size:243K _inchange_semiconductor

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isc N-Channel MOSFET Transistor IPD33CN10N,IIPD33CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤34mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

1.43. ipd16cn10n.pdf Size:242K _inchange_semiconductor

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isc N-Channel MOSFET Transistor IPD16CN10N,IIPD16CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

1.44. ipb16cn10ng.pdf Size:258K _inchange_semiconductor

CN1
CN1

Isc N-Channel MOSFET Transistor IPB16CN10NG ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

1.45. ipp12cn10l.pdf Size:245K _inchange_semiconductor

CN1
CN1

isc N-Channel MOSFET Transistor IPP12CN10L,IIPP12CN10L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

1.46. ips12cn10l.pdf Size:261K _inchange_semiconductor

CN1
CN1

isc N-Channel MOSFET Transistor IPS12CN10L ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

1.47. cs04cn10.pdf Size:116K _china

CN1

CS04CN10N 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 300 W ID (VGS=10V,TC=25℃) 100 A ID (VGS=10V,TC=100℃) 100 A 极 限 IDM 400 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 RthJC 0.5 特 ℃/W RthJA 62 性 BVDSS VGS=0V,ID=1.0mA 100 V RDS on) VGS=10V,ID=100A 3.5 4.2 mΩ (

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: HTL194 | C3198 | AT41586 | TIP540 | SBT92 | SAP16N | RN2130FV | D71F2T1 | 2T951V | 2T951B | 2T951A | 104NU71 | 103NU71 | 102NU71 | 101NU71 | YZ21 | WT062 | TL142 | TIP3055T | TIP2955T |

 

 

 
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