CN1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

QContinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR CN 1CP4TO-92Plastic PackageAudio Frequency General Purpose and Driver Stage Amplofier Application for Transistor Radios.Complementary CP 4ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITBVCEOCollector Emit

$ " " $( " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 100 VDSS ( 5:3@@7> @AD?3> >7H7> 64 m DS(on) maxS J57>>7@F 93F7 5:3D97 J BDA6G5F !) ' DS(on) 17 ADS 07DK >AI A@ D7E;EF3@57 DS(on)S V AB7D3F;@9 F7?B7D3FGD7S *4 8D77 >736 B>3F;@9 , A#- 5A?B>;3@F1)S + G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D

IPB08CN10N GIPI08CN10N G IPP08CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 8.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 95 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

IPB80CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G IPU78CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM)DS(on)ID 67 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

IPB04CN10N G IPI04CN10N GIPP04CN10N G 2 Power-TransistorProduct SummaryFeaturesV 1 D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I 1 DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E4

IPB05CN10N G IPI05CN10N GIPP05CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7

$ " " $ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1 D S ) 5:3@@7> @AD?3> >7H7> 4 m . A@ ?3J /* S !J57>>7@F 93F7 5:3D97 J BDA6G5F "* ( D n)DS 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@S %673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE

IPB06CN10N G IPI06CN10N GIPP06CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 6.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

IPP08CN10L G 2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, logic levelR 8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 98 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency

IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM)DS(on)ID 35 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

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IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

%% # ! % (>.;?6?@%>EFeatures 1 D S ) 5:3@@7> >A9;5 >7H7> 1 7 m . A@ ?3J S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 4 DS 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A#. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D75F;8;53F;A@Type

www.DataSheet4U.comIPB16CN10N G IPD16CN10N GIPI16CN10N G IPP16CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 16mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 53 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified

IPB06CN10N G IPI06CN10N GIPP06CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 6.2 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7

$ " " $ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=D 1 Features D 1 m S ) 5:3@@7> @AD?3> >7H7> . A@ ?3J /* S !J57>>7@F 93F7 5:3D97 J BDA6G5F "* ( DD n)S 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@S %673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D7

IPB34CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 33 mW Excellent gate charge x R product (FOM)DS(on)ID 27 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f

IPB04CN10N G IPI04CN10N GIPP04CN10N G 2 Power-TransistorProduct SummaryFeaturesV 1 D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I 1 DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E4

IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G IPU25CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 25mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 35 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

IPS12CN10L GIPP12CN10L GOptiMOS2 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, logic levelRDS(on),max 12mW Excellent gate charge x R product (FOM)DS(on)ID 69 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high

$ " " $( " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 100 VDSS ( 5:3@@7> @AD?3> >7H7> 64 m DS(on) maxS J57>>7@F 93F7 5:3D97 J BDA6G5F !) ' DS(on) 17 ADS 07DK >AI A@ D7E;EF3@57 DS(on)S V AB7D3F;@9 F7?B7D3FGD7S *4 8D77 >736 B>3F;@9 , A#- 5A?B>;3@F1)S + G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D

$ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 100 VDSR ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 ADR /6CJ =@H @? C6D:DE2?46 DS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@

IPB35CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N G IPU33CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 34mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 27 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM)DS(on)ID 13 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

%% # ! % (>.;?6?@%>EFeatures 1 D S ) 5:3@@7> >A9;5 >7H7> m . A@ ?3J S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 1 DS 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A#. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D75F;8;53F;A@ pe $++

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1933(9AW)TO-220MARKING: CN1933Low Freq. Power Amp.Built in Damper DiodeComplementry CP1342ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 80 VCollector -Emitter Voltage VCEO 80 VEmitte

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1016(9AW)TO-3PMARKING:- CN1016ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 160 VCollector -Emitter Voltage VCEO 150 VEmitter Base Voltage VEBO 5.0 VCollector Current IC 10 APeak t=30m

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CN 107TO-92CBEABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6.0 VCollector Current Continuous IC 100 mAPeak ICM 200 mATotal Power Dissipation

CS04CN10N N PD TC=25 300 W ID VGS=10V,TC=25 100 A ID VGS=10V,TC=100 100 A IDM 400 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W RthJA 62 BVDSS VGS=0V,ID=1.0mA 100 V RDS on VGS=10V,ID=100A 3.5 4.2 m

IPD78CN10Nwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % UIS tested0.055 at VGS = 10 V 250.057 at VGS = 4.5 V 100 25 21nC0.070 at VGS = 2.5 V 18APPLICATIONS Primary side switchDTO-252GG D SSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unl

Isc N-Channel MOSFET Transistor IPB26CN10NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP12CN10NIIPP12CN10NFEATURESStatic drain-source on-resistance:RDS(on) 12.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

Isc N-Channel MOSFET Transistor IPB16CN10NGFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPD33CN10N,IIPD33CN10NFEATURESStatic drain-source on-resistance:RDS(on)34mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI35CN10NFEATURESStatic drain-source on-resistance:RDS(on) 0.035Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(

isc N-Channel MOSFET Transistor IPD78CN10N,IIPD78CN10NFEATURESStatic drain-source on-resistance:RDS(on)78mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI80CN10NFEATURESStatic drain-source on-resistance:RDS(on) 0.08Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

Isc N-Channel MOSFET Transistor IPB79CN10NGFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPP16CN10NIIPP16CN10NFEATURESStatic drain-source on-resistance:RDS(on) 16mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP26CN10NIIPP26CN10NFEATURESStatic drain-source on-resistance:RDS(on) 26mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

isc N-Channel MOSFET Transistor IPD25CN10N,IIPD25CN10NFEATURESStatic drain-source on-resistance:RDS(on)25mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP35CN10NIIPP35CN10NFEATURESStatic drain-source on-resistance:RDS(on) 0.035Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

Isc N-Channel MOSFET Transistor IPI26CN10NFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1

Isc N-Channel MOSFET Transistor IPB12CN10NGFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPI05CN10NFEATURESStatic drain-source on-resistance:RDS(on) 5.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc N-Channel MOSFET Transistor IPD16CN10N,IIPD16CN10NFEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

NCHANGE Semicon Iductorisc N-Channel MOSFET Transistor IPP04CN10NIIPP04CN10NFEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

NCHANGE Semicon Iductorisc N-Channel MOSFET Transistor IPI04CN10NFEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(

Isc N-Channel MOSFET Transistor IPI12CN10NGFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP80CN10NIIPP80CN10NFEATURESStatic drain-source on-resistance:RDS(on) 0.08Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

isc N-Channel MOSFET Transistor IPI16CN10NFEATURESStatic drain-source on-resistance:RDS(on) 16mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Isc N-Channel MOSFET Transistor IPB04CN10NGFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

isc N-Channel MOSFET Transistor IPP05CN10NIIPP05CN10NFEATURESStatic drain-source on-resistance:RDS(on) 5.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Isc N-Channel MOSFET Transistor IPB05CN10NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

isc N-Channel MOSFET Transistor IPS12CN10LFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Isc N-Channel MOSFET Transistor IPB34CN10NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

isc N-Channel MOSFET Transistor IPP12CN10LIIPP12CN10LFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a