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CP4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CP4
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 12 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 4.5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO-92
 

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CP4 Datasheet (PDF)

 ..1. Size:253K  cdil
cn1 cp4.pdf pdf_icon

CP4

QContinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR CN 1CP4TO-92Plastic PackageAudio Frequency General Purpose and Driver Stage Amplofier Application for Transistor Radios.Complementary CP 4ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITBVCEOCollector Emit

 0.1. Size:158K  st
std830cp40.pdf pdf_icon

CP4

STD830CP40Complementary transistor pair in a single packageDatasheet production dataFeatures Low VCE(sat) Simplified circuit design Reduced component count8 Low spread of dynamic parameters41Application Compact fluorescent lamp (CFL) 220 V mains DIP-8DescriptionThe STD830CP40 is a hybrid complementary pair Figure 1. Internal schematic diagram

 0.2. Size:187K  st
std815cp40.pdf pdf_icon

CP4

STD815CP40Complementary transistor pair in a single packageDatasheet production dataFeatures Low VCE(sat) Simplified circuit design Reduced component count Low spread of dynamic parameters84Application 1 Compact fluorescent lamp (CFL) 220 V mains DIP-8DescriptionThe STD815CP40 is a hybrid complementary pair of power bipolar transistors manufactur

 0.3. Size:912K  fairchild semi
fcp4n60.pdf pdf_icon

CP4

December 2008 TMSuperFETFCP4N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 1.0balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

Otros transistores... CN8550C , CN8550D , CNL635 , CNL637 , CNL639 , CO38P , CP107 , CP1342 , TIP127 , CP500 , CP501 , CP502 , CP503 , CP504 , CP550 , CP551 , CP552 .

History: DDTC124EUA | HEPS3050

 

 
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