Справочник транзисторов. CP4

 

Биполярный транзистор CP4 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: CP4

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.4 W

Макcимально допустимое напряжение коллектор-база (Ucb): 12 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 4.5 V

Макcимальный постоянный ток коллектора (Ic): 0.15 A

Предельная температура PN-перехода (Tj): 125 °C

Статический коэффициент передачи тока (hfe): 50

Корпус транзистора: TO-92

Аналоги (замена) для CP4

 

 

CP4 Datasheet (PDF)

1.1. std830cp40.pdf Size:158K _st

CP4
CP4

STD830CP40 Complementary transistor pair in a single package Datasheet — production data Features ■ Low VCE(sat) ■ Simplified circuit design ■ Reduced component count 8 ■ Low spread of dynamic parameters 4 1 Application ■ Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description The STD830CP40 is a hybrid complementary pair Figure 1. Internal schematic diagram

1.2. std815cp40.pdf Size:187K _st

CP4
CP4

STD815CP40 Complementary transistor pair in a single package Datasheet — production data Features ■ Low VCE(sat) ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application 1 ■ Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description The STD815CP40 is a hybrid complementary pair of power bipolar transistors manufactur

 1.3. fcp4n60.pdf Size:912K _fairchild_semi

CP4
CP4

December 2008 TM SuperFET FCP4N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 1.0Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

1.4. bcp29 bcp49.pdf Size:153K _siemens

CP4
CP4

NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications High collector current High current gain Complementary types: BCP 28/48 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BCP 29 BCP 29 Q62702-C2136 SOT-223 BCP 49 BCP 49 Q62702-C2137 Maximum Ratings Parameter Symbol Values Unit BCP 29 BCP 49 Collector-emitter voltage VCE0 3

 1.5. bcp49.pdf Size:71K _infineon

CP4
CP4

BCP49 NPN Silicon Darlington Transistors • For general AF applications • High collector current 4 3 • High current gain 2 1 • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 C(2,4) B(1) E(3) EHA00009 Type Marking Pin Configuration Package BCP49 BCP 49 1 = B 2 = C 3 = E 4 = C SOT223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter volt

1.6. bcp4672.pdf Size:212K _secos

CP4
CP4

BCP4672 2A, 60V NPN Epitaxial Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89  The BCP4672 is designed for low frequency amplifier applications. 4 MARKING 1 2 3 4 6 7 2 A  Date Code E C B D CLASSIFICATION OF hFE F G Product Rank BCP4672-A BCP4672-B H K J L

1.7. cn1 cp4.pdf Size:253K _cdil

CP4
CP4

Q Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CN 1 CP4 TO-92 Plastic Package Audio Frequency General Purpose and Driver Stage Amplofier Application for Transistor Radios. Complementary CP 4 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT BVCEO Collector Emit

Другие транзисторы... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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