2N613 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N613
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.18 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 90 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.85 MHz
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta: TO5
2N613 Datasheet (PDF)
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2n6132 2n6133 2n6134.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ra
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6130DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type 2N6133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio
Otros transistores... 2N6122 , 2N6123 , 2N6124 , 2N6125 , 2N6126 , 2N6127 , 2N6128 , 2N6129 , BC557 , 2N6130 , 2N6131 , 2N6132 , 2N6133 , 2N6134 , 2N6135 , 2N6136 , 2N614 .
History: 3DG1923 | BC847 | 2N2828 | FHD100
History: 3DG1923 | BC847 | 2N2828 | FHD100



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