All Transistors. 2N613 Datasheet

 

2N613 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N613
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.18 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.85 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO5

 2N613 Transistor Equivalent Substitute - Cross-Reference Search

   

2N613 Datasheet (PDF)

 0.1. Size:104K  jmnic
2n6129 2n6130 2n6131.pdf

2N613
2N613

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r

 0.2. Size:104K  jmnic
2n6132 2n6133 2n6134.pdf

2N613
2N613

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ra

 0.3. Size:137K  unitrode
2n6137.pdf

2N613
2N613

 0.4. Size:194K  inchange semiconductor
2n6130.pdf

2N613
2N613

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6130DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type 2N6133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio

 0.5. Size:194K  inchange semiconductor
2n6131.pdf

2N613
2N613

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6131DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type 2N6134Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio

 0.6. Size:120K  inchange semiconductor
2n6129 2n6130 2n6131.pdf

2N613
2N613

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute

 0.7. Size:195K  inchange semiconductor
2n6132.pdf

2N613
2N613

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6132DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)CEO(SUS)Complement to Type 2N6129Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica

 0.8. Size:119K  inchange semiconductor
2n6132 2n6133 2n6134.pdf

2N613
2N613

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

 0.9. Size:195K  inchange semiconductor
2n6133.pdf

2N613
2N613

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6133DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type 2N6130Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica

 0.10. Size:196K  inchange semiconductor
2n6134.pdf

2N613
2N613

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6134DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type 2N6131Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica

Datasheet: 2N6122 , 2N6123 , 2N6124 , 2N6125 , 2N6126 , 2N6127 , 2N6128 , 2N6129 , 13003 , 2N6130 , 2N6131 , 2N6132 , 2N6133 , 2N6134 , 2N6135 , 2N6136 , 2N614 .

 

 
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