CSC2786MF Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSC2786MF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 400 MHz
Capacitancia de salida (Cc): 1.3 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de CSC2786MF
CSC2786MF datasheet
csc2786 mf lf kf.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2786 TO-92 Plastic Package B C E For use in FM RF Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage 4 V IB Base Current 20
csc2713.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2713 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER Formed SMD Package 3 = COLLECTOR 3 1 2 MARKING CSC2713 =13 CSC2713G =13G CSC2713L =13L Complementary CSA1163 Audio Frequency General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATING
csc2712.pdf
IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE OUTLINE DETAILS CSC2712Y=1E ALL DIMENSIONS IN mm CSC2712GR(G)=1F CSC2712BL(L)=1G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLE
Otros transistores... CSC2690AR , CSC2690AY , CSC2690O , CSC2690R , CSC2690Y , CSC2786 , CSC2786KF , CSC2786LF , TIP41 , CSC3063 , CSC3114 , CSC3114R , CSC3114S , CSC3114T , CSC3114U , CSC3197 , CSC3198 .
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