CSC2786MF Datasheet, Equivalent, Cross Reference Search
Type Designator: CSC2786MF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 1.3 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-92
CSC2786MF Transistor Equivalent Substitute - Cross-Reference Search
CSC2786MF Datasheet (PDF)
csc2786 mf lf kf.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2786TO-92Plastic PackageBCEFor use in FM RF AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 20 VVCBOCollector Base Voltage 30 VVEBOEmitter Base Voltage 4 VIBBase Current 20
csc2713.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC2713PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTERFormed SMD Package3 = COLLECTOR312MARKINGCSC2713 =13CSC2713G =13GCSC2713L =13LComplementary CSA1163Audio Frequency General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATING
csc2712.pdf
IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerSOT-23 Formed SMD Package CSC2712SILICON PLANAR EPITAXIAL TRANSISTORN-P-N transistorMarkingPACKAGE OUTLINE DETAILSCSC2712Y=1EALL DIMENSIONS IN mmCSC2712GR(G)=1FCSC2712BL(L)=1GPin configuration1 = BASE2 = EMITTER3 = COLLE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
