PN200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic PackageCBECOMPLEMENTARY PN100, PN100AABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 35 VVCBOCollector Base Voltage 60 VVEBOEmitter

PN200 MMBT200PN200A MMBT200ACEC TO-92SOT-23 BBEMark: N2 / N2APNP General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 V

PN200 MMBT200PN200A MMBT200ACEC TO-92SOT-23 BBEMark: N2 / N2APNP General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 V

PN200A / MMBT200PNP General-Purpose AmplifierDescriptionThis device is designed for general-purpose amplifierapplications at collector currents to 300 mA. Sourcedfrom Process 68.CETO-92BSOT-23EBCFigure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering InformationPart Number Marking Package Packing MethodPN200A PN200A TO-92 3L BulkMMBT200 N2 SOT-2