PN200 Todos los transistores

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package C B E COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 35 V VCBO Collector Base Voltage 60 V VEBO Emitter

PN200 MMBT200 PN200A MMBT200A C E C TO-92 SOT-23 B B E Mark N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V

PN200 MMBT200 PN200A MMBT200A C E C TO-92 SOT-23 B B E Mark N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V

PN200A / MMBT200 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. C E TO-92 B SOT-23 EBC Figure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering Information Part Number Marking Package Packing Method PN200A PN200A TO-92 3L Bulk MMBT200 N2 SOT-2