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SL100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SL100
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO-39

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SL100 Datasheet (PDF)

 ..1. Size:400K  teamasia
sl100.pdf

SL100
SL100

CEOCBOEBOA DCj stgCEOC BCBOC EEBOE CCBOCB EEBOEB CC CEC CEC BC BoboCB E

 0.1. Size:17K  advanced-semi
cbsl100.pdf

SL100

CBSL100NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R(4X).060 RFEATURES: EMD Input Matching Network C .1925 F Omnigold Metalization System G H NI LK JMAXIMUM RATINGS MINIMUM MAXIMUMDIMinches / mm inches / mmIC 25 A .220 / 5.59 .230 / 5.

 0.2. Size:860K  slkor
sl1002b.pdf

SL100
SL100

SL1002BN-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m

 0.3. Size:1740K  slkor
sl100n08.pdf

SL100
SL100

SL100N08N-Channel Power MOSFET General Features VDS =80V,I =100A D RDS(ON)

 0.4. Size:1244K  slkor
sl100n03r.pdf

SL100
SL100

SL100N03R N-Channel Enhancement Mode Power MOSFETDescription This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30VI

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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