SL100 Specs and Replacement
Type Designator: SL100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-39
- BJT ⓘ Cross-Reference Search
SL100 datasheet
..1. Size:400K teamasia
sl100.pdf 
CEO CBO EBO A D C j stg CEO C B CBO C E EBO E C CBO CB E EBO EB C C CE C CE C B C B obo CB E ... See More ⇒
0.1. Size:17K advanced-semi
cbsl100.pdf
CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R (4X).060 R FEATURES E M D Input Matching Network C .1925 F Omnigold Metalization System G H N I L K J MAXIMUM RATINGS MINIMUM MAXIMUM DIM inches / mm inches / mm IC 25 A .220 / 5.59 .230 / 5.... See More ⇒
0.2. Size:860K slkor
sl1002b.pdf
SL1002B N-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m... See More ⇒
0.3. Size:1740K slkor
sl100n08.pdf
SL100N08 N-Channel Power MOSFET General Features VDS =80V,I =100A D RDS(ON) ... See More ⇒
0.4. Size:1244K slkor
sl100n03r.pdf
SL100N03R N-Channel Enhancement Mode Power MOSFET Description This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30V I... See More ⇒
0.5. Size:301K jiejie micro
jmsl1008agq.pdf
JMSL1008AGQ 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 88 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.0 m RDS(ON)_Typ (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant AEC-Q101 ... See More ⇒
0.6. Size:289K jiejie micro
jmsl1008ag.pdf
JMSL1008AG 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 93 A RDS(ON) (@ VGS = 10V) 6.0 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant Applications Power Managerment... See More ⇒
0.7. Size:325K jiejie micro
jmsl1004bg.pdf
JMSL1004BG 100V 3.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.4 m RDS(ON)_Typ (@ VGS = 4.5V) 4.3 m Halogen-free and RoHS-compliant Applications Powe... See More ⇒
0.8. Size:392K jiejie micro
jmsl1009akq.pdf
JMSL1009AKQ 100V 7.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 81 A RDS(ON)_Typ (@ VGS = 10V) 7.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 9.9 m Halogen-free and RoHS-compliant AEC-Q10... See More ⇒
0.9. Size:325K jiejie micro
jmsl1008ak.pdf
JMSL1008AK 100V 6.7m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 82 A RDS(ON)_Typ (@ VGS = 10V) 6.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 8.5 m Halogen-free and RoHS-compliant Applications Pow... See More ⇒
0.10. Size:1259K jiejie micro
jmsl1004rg.pdf
100V, 98A, 4.1m N-channel Power SGT MOSFET JMSL1004RG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 98 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Manag... See More ⇒
0.11. Size:1195K jiejie micro
jmsl1008pgq.pdf
100V, 92A, 8.3m N-channel Power SGT MOSFET JMSL1008PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 1.8 V 100% Vds Tested ID(@VGS=10V) 92 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 6.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 8.3 mW Applications ... See More ⇒
0.12. Size:325K jiejie micro
jmsl1006agq.pdf
JMSL1006AGQ 100V 4.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 110 A RDS(ON) (@ VGS = 10V) 4.7 m Pb-free Lead Plating RDS(ON) (@ VGS = 4.5V) 5.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified... See More ⇒
0.13. Size:1311K jiejie micro
jmsl1009pun.pdf
100V, 45A, 7.5m N-channel Power SGT MOSFET JMSL1009PUN Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 45 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.1 mW RDS(ON)_Typ(@VGS=4.5V 7.5 mW Applications Load Switch P... See More ⇒
0.14. Size:1274K jiejie micro
jmsl1005pc.pdf
100V, 131A, 4.4m N-channel Power SGT MOSFET JMSL1005PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 131 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications Load Switch PWM Application Power Management D G S TO... See More ⇒
0.15. Size:1233K jiejie micro
jmsl1009pp.pdf
100V, 12A, 9.2m N-channel Power SGT MOSFET JMSL1009PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 12 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.6 mW RDS(ON)_Typ(@VGS=4.5V 9.2 mW Applications Load Switch PW... See More ⇒
0.16. Size:1241K jiejie micro
jmsl1006pgs.pdf
100V, 109A, 6.4m N-channel Power SGT MOSFET JMSL1006PGS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 109 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications RDS(ON)_Typ(@VGS=4.5V 6.4 mW Load Switch PWM Application ... See More ⇒
0.17. Size:629K jiejie micro
jmsl1008mkq.pdf
100V, 56A, 9.0m N-channel Power SGT MOSFET JMSL1008MKQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 56 A RDS(ON)_Typ(@VGS=10V 6.5 m Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=4.5V 9.0 m AEC-Q101 Qualified Applications ... See More ⇒
0.18. Size:1243K jiejie micro
jmsl1009pg.pdf
100V, 93A, 7.3m N-channel Power SGT MOSFET JMSL1009PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 93 A RDS(ON)_Typ(@VGS=10V 5.6 mW Applications RDS(ON)_Typ(@VGS=4.5V 7.3 mW Load Switch PWM Application Pow... See More ⇒
0.20. Size:391K jiejie micro
jmsl1009au.pdf
JMSL1009AU 100V 7.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.6 m RDS(ON)_Typ (@ VGS = 4.5V) 9.7 m Halogen-free and RoHS-compliant Applications... See More ⇒
0.21. Size:1193K jiejie micro
jmsl1005pk.pdf
100V, 71A, 5.2m N-channel Power SGT MOSFET JMSL1005PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 71 A RDS(ON)_Typ(@VGS=10V 4.2 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.2 mW Load Switch PWM Application Pow... See More ⇒
0.22. Size:1240K jiejie micro
jmsl1006pg.pdf
100V, 115A, 5.5m N-channel Power SGT MOSFET JMSL1006PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 115 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.5 mW Load Switch PWM Application P... See More ⇒
0.23. Size:1287K jiejie micro
jmsl1009pk.pdf
100V, 88A, 5.8m N-channel Power SGT MOSFET JMSL1009PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 88 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.8 mW RDS(ON)_Typ(@VGS=4.5V 7.6 mW Applications Load Switch PWM... See More ⇒
0.24. Size:399K jiejie micro
jmsl1009ak.pdf
JMSL1009AK 100V 7.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 78 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.8 m RDS(ON)_Typ (@ VGS = 4.5V) 9.9 m Halogen-free and RoHS-compliant Application... See More ⇒
0.25. Size:355K jiejie micro
jmsl1009buq.pdf
JMSL1009BUQ 100V 7.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 76 A RDS(ON)_Typ (@ VGS = 10V) 7.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.0 m Halogen-free and RoHS-compliant AEC-Q1... See More ⇒
0.27. Size:323K jiejie micro
jmsl1006ak.pdf
JMSL1006AK 100V 5.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 99 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.4 m RDS(ON)_Typ (@ VGS = 4.5V) 6.6 m Halogen-free and RoHS-compliant Applications Power... See More ⇒
0.28. Size:308K jiejie micro
jmsl1006ag.pdf
JMSL1006AG 100V 4.7m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 108 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.7 m RDS(ON) (@ VGS = 4.5V) 5.9 m Halogen-free and RoHS-compliant Applications Power Managermen... See More ⇒
0.29. Size:350K jiejie micro
jmsl1008ap.pdf
JMSL1008AP 100V 7.4m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON) (@ VGS = 4.5V) 9.2 m Halogen-free and RoHS-compliant Applications Power Manager... See More ⇒
0.30. Size:1226K jiejie micro
jmsl1009pf.pdf
100V, 53A, 5.8m N-channel Power SGT MOSFET JMSL1009PF Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 53 A RDS(ON)_Typ(@VGS=10V 5.8 mW Applications Load Switch PWM Application Power Management D G S TO-22... See More ⇒
0.31. Size:394K jiejie micro
jmsl1009ag.pdf
JMSL1009AG 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 77 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.0 m RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m Halogen-free and RoHS-compliant Applications... See More ⇒
0.32. Size:1205K jiejie micro
jmsl1005pg.pdf
100V, 128A, 5.3m N-channel Power SGT MOSFET JMSL1005PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 128 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.3 mW Load Switch PWM Application P... See More ⇒
0.33. Size:402K jiejie micro
jmsl1009agq.pdf
JMSL1009AGQ 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 80 A RDS(ON)_Typ (@ VGS = 10V) 7.0 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m Halogen-free and RoHS-compliant AEC-Q10... See More ⇒
0.34. Size:352K jiejie micro
jmsl1008akq.pdf
JMSL1008AKQ 100V 6.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.7 m RDS(ON)_Typ (@ VGS = 4.5V) 8.5 m Halogen-free and RoHS-compliant AEC-Q10... See More ⇒
Detailed specifications: CVL640
, MZT3055
, P2N2369
, P2N2369A
, P2N2907A
, PN100
, PN200
, 2CF2325
, D880
, 2N23867
, 2N3055HV
, 2N6371HV
, A1941
, BD237S
, BD675BPL
, BF422BPL
, BU908F
.
History: CIL235
| 2SC3281
| P2N2369A
| CSD794
| 2SC3281O
| CSD794A
| 2SC495Y
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