SL100 datasheet, аналоги, основные параметры
Наименование производителя: SL100 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO-39
📄📄 Копировать
Аналоги (замена) для SL100
- подборⓘ биполярного транзистора по параметрам
SL100 даташит
..1. Size:400K teamasia
sl100.pdf 
CEO CBO EBO A D C j stg CEO C B CBO C E EBO E C CBO CB E EBO EB C C CE C CE C B C B obo CB E
0.1. Size:17K advanced-semi
cbsl100.pdf 
CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R (4X).060 R FEATURES E M D Input Matching Network C .1925 F Omnigold Metalization System G H N I L K J MAXIMUM RATINGS MINIMUM MAXIMUM DIM inches / mm inches / mm IC 25 A .220 / 5.59 .230 / 5.
0.2. Size:860K slkor
sl1002b.pdf 
SL1002B N-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m
0.3. Size:1740K slkor
sl100n08.pdf 
SL100N08 N-Channel Power MOSFET General Features VDS =80V,I =100A D RDS(ON)
0.4. Size:1244K slkor
sl100n03r.pdf 
SL100N03R N-Channel Enhancement Mode Power MOSFET Description This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30V I
0.5. Size:301K jiejie micro
jmsl1008agq.pdf 
JMSL1008AGQ 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 88 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.0 m RDS(ON)_Typ (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant AEC-Q101
0.6. Size:289K jiejie micro
jmsl1008ag.pdf 
JMSL1008AG 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 93 A RDS(ON) (@ VGS = 10V) 6.0 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant Applications Power Managerment
0.7. Size:325K jiejie micro
jmsl1004bg.pdf 
JMSL1004BG 100V 3.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.4 m RDS(ON)_Typ (@ VGS = 4.5V) 4.3 m Halogen-free and RoHS-compliant Applications Powe
0.8. Size:392K jiejie micro
jmsl1009akq.pdf 
JMSL1009AKQ 100V 7.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 81 A RDS(ON)_Typ (@ VGS = 10V) 7.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 9.9 m Halogen-free and RoHS-compliant AEC-Q10
0.9. Size:325K jiejie micro
jmsl1008ak.pdf 
JMSL1008AK 100V 6.7m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 82 A RDS(ON)_Typ (@ VGS = 10V) 6.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 8.5 m Halogen-free and RoHS-compliant Applications Pow
0.10. Size:1259K jiejie micro
jmsl1004rg.pdf 
100V, 98A, 4.1m N-channel Power SGT MOSFET JMSL1004RG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 98 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Manag
0.11. Size:1195K jiejie micro
jmsl1008pgq.pdf 
100V, 92A, 8.3m N-channel Power SGT MOSFET JMSL1008PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 1.8 V 100% Vds Tested ID(@VGS=10V) 92 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 6.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 8.3 mW Applications
0.12. Size:325K jiejie micro
jmsl1006agq.pdf 
JMSL1006AGQ 100V 4.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 110 A RDS(ON) (@ VGS = 10V) 4.7 m Pb-free Lead Plating RDS(ON) (@ VGS = 4.5V) 5.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified
0.13. Size:1311K jiejie micro
jmsl1009pun.pdf 
100V, 45A, 7.5m N-channel Power SGT MOSFET JMSL1009PUN Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 45 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.1 mW RDS(ON)_Typ(@VGS=4.5V 7.5 mW Applications Load Switch P
0.14. Size:1274K jiejie micro
jmsl1005pc.pdf 
100V, 131A, 4.4m N-channel Power SGT MOSFET JMSL1005PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 131 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications Load Switch PWM Application Power Management D G S TO
0.15. Size:1233K jiejie micro
jmsl1009pp.pdf 
100V, 12A, 9.2m N-channel Power SGT MOSFET JMSL1009PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 12 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.6 mW RDS(ON)_Typ(@VGS=4.5V 9.2 mW Applications Load Switch PW
0.16. Size:1241K jiejie micro
jmsl1006pgs.pdf 
100V, 109A, 6.4m N-channel Power SGT MOSFET JMSL1006PGS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 109 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications RDS(ON)_Typ(@VGS=4.5V 6.4 mW Load Switch PWM Application
0.17. Size:629K jiejie micro
jmsl1008mkq.pdf 
100V, 56A, 9.0m N-channel Power SGT MOSFET JMSL1008MKQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 56 A RDS(ON)_Typ(@VGS=10V 6.5 m Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=4.5V 9.0 m AEC-Q101 Qualified Applications
0.18. Size:1243K jiejie micro
jmsl1009pg.pdf 
100V, 93A, 7.3m N-channel Power SGT MOSFET JMSL1009PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 93 A RDS(ON)_Typ(@VGS=10V 5.6 mW Applications RDS(ON)_Typ(@VGS=4.5V 7.3 mW Load Switch PWM Application Pow
0.20. Size:391K jiejie micro
jmsl1009au.pdf 
JMSL1009AU 100V 7.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.6 m RDS(ON)_Typ (@ VGS = 4.5V) 9.7 m Halogen-free and RoHS-compliant Applications
0.21. Size:1193K jiejie micro
jmsl1005pk.pdf 
100V, 71A, 5.2m N-channel Power SGT MOSFET JMSL1005PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 71 A RDS(ON)_Typ(@VGS=10V 4.2 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.2 mW Load Switch PWM Application Pow
0.22. Size:1240K jiejie micro
jmsl1006pg.pdf 
100V, 115A, 5.5m N-channel Power SGT MOSFET JMSL1006PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 115 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.5 mW Load Switch PWM Application P
0.23. Size:1287K jiejie micro
jmsl1009pk.pdf 
100V, 88A, 5.8m N-channel Power SGT MOSFET JMSL1009PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 88 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.8 mW RDS(ON)_Typ(@VGS=4.5V 7.6 mW Applications Load Switch PWM
0.24. Size:399K jiejie micro
jmsl1009ak.pdf 
JMSL1009AK 100V 7.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 78 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.8 m RDS(ON)_Typ (@ VGS = 4.5V) 9.9 m Halogen-free and RoHS-compliant Application
0.25. Size:355K jiejie micro
jmsl1009buq.pdf 
JMSL1009BUQ 100V 7.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 76 A RDS(ON)_Typ (@ VGS = 10V) 7.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.0 m Halogen-free and RoHS-compliant AEC-Q1
0.27. Size:323K jiejie micro
jmsl1006ak.pdf 
JMSL1006AK 100V 5.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 99 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.4 m RDS(ON)_Typ (@ VGS = 4.5V) 6.6 m Halogen-free and RoHS-compliant Applications Power
0.28. Size:308K jiejie micro
jmsl1006ag.pdf 
JMSL1006AG 100V 4.7m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 108 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.7 m RDS(ON) (@ VGS = 4.5V) 5.9 m Halogen-free and RoHS-compliant Applications Power Managermen
0.29. Size:350K jiejie micro
jmsl1008ap.pdf 
JMSL1008AP 100V 7.4m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON) (@ VGS = 4.5V) 9.2 m Halogen-free and RoHS-compliant Applications Power Manager
0.30. Size:1226K jiejie micro
jmsl1009pf.pdf 
100V, 53A, 5.8m N-channel Power SGT MOSFET JMSL1009PF Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 53 A RDS(ON)_Typ(@VGS=10V 5.8 mW Applications Load Switch PWM Application Power Management D G S TO-22
0.31. Size:394K jiejie micro
jmsl1009ag.pdf 
JMSL1009AG 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 77 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.0 m RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m Halogen-free and RoHS-compliant Applications
0.32. Size:1205K jiejie micro
jmsl1005pg.pdf 
100V, 128A, 5.3m N-channel Power SGT MOSFET JMSL1005PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 128 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.3 mW Load Switch PWM Application P
0.33. Size:402K jiejie micro
jmsl1009agq.pdf 
JMSL1009AGQ 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 80 A RDS(ON)_Typ (@ VGS = 10V) 7.0 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m Halogen-free and RoHS-compliant AEC-Q10
0.34. Size:352K jiejie micro
jmsl1008akq.pdf 
JMSL1008AKQ 100V 6.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.7 m RDS(ON)_Typ (@ VGS = 4.5V) 8.5 m Halogen-free and RoHS-compliant AEC-Q10
Другие транзисторы: CVL640, MZT3055, P2N2369, P2N2369A, P2N2907A, PN100, PN200, 2CF2325, 2SC945, 2N23867, 2N3055HV, 2N6371HV, A1941, BD237S, BD675BPL, BF422BPL, BU908F
