SL100
- Даташиты. Аналоги. Основные параметры
Наименование производителя: SL100
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.8
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 200
°C
Ёмкость коллекторного перехода (Cc): 20
pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO-39
Аналоги (замена) для SL100
-
подбор ⓘ биполярного транзистора по параметрам
SL100
Datasheet (PDF)
..1. Size:400K teamasia
sl100.pdf 

CEOCBOEBOA DCj stgCEOC BCBOC EEBOE CCBOCB EEBOEB CC CEC CEC BC BoboCB E
0.1. Size:17K advanced-semi
cbsl100.pdf 

CBSL100NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R(4X).060 RFEATURES: EMD Input Matching Network C .1925 F Omnigold Metalization System G H NI LK JMAXIMUM RATINGS MINIMUM MAXIMUMDIMinches / mm inches / mmIC 25 A .220 / 5.59 .230 / 5.
0.2. Size:860K slkor
sl1002b.pdf 

SL1002BN-Ch 100V Fast Switching MOSFETs Green Device Available Product Summary Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench BVDSS RDSON ID technology 100V 310m 2 A Description SOT23 Pin Configuration The SL1002B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for m
0.3. Size:1740K slkor
sl100n08.pdf 

SL100N08N-Channel Power MOSFET General Features VDS =80V,I =100A D RDS(ON)
0.4. Size:1244K slkor
sl100n03r.pdf 

SL100N03R N-Channel Enhancement Mode Power MOSFETDescription This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30VI
0.5. Size:301K jiejie micro
jmsl1008agq.pdf 

JMSL1008AGQ100V 6.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 88 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.0 m RDS(ON)_Typ (@ VGS = 4.5V)8.0 m Halogen-free and RoHS-compliant AEC-Q101
0.6. Size:289K jiejie micro
jmsl1008ag.pdf 

JMSL1008AG100V 6.0m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 93 A RDS(ON) (@ VGS = 10V)6.0 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)8.0 m Halogen-free and RoHS-compliantApplications Power Managerment
0.7. Size:325K jiejie micro
jmsl1004bg.pdf 

JMSL1004BG100V 3.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.4 m RDS(ON)_Typ (@ VGS = 4.5V)4.3 m Halogen-free and RoHS-compliantApplications Powe
0.8. Size:392K jiejie micro
jmsl1009akq.pdf 

JMSL1009AKQ100V 7.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 81 A RDS(ON)_Typ (@ VGS = 10V)7.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)9.9 m Halogen-free and RoHS-compliant AEC-Q10
0.9. Size:325K jiejie micro
jmsl1008ak.pdf 

JMSL1008AK100V 6.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 82 A RDS(ON)_Typ (@ VGS = 10V)6.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)8.5 m Halogen-free and RoHS-compliantApplications Pow
0.10. Size:1259K jiejie micro
jmsl1004rg.pdf 

100V, 98A, 4.1m N-channel Power SGT MOSFETJMSL1004RGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 98 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.1 mWApplications Load Switch PWM Application Power Manag
0.11. Size:1195K jiejie micro
jmsl1008pgq.pdf 

100V, 92A, 8.3m N-channel Power SGT MOSFETJMSL1008PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.8 V 100% Vds TestedID(@VGS=10V) 92 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 6.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 8.3 mWApplications
0.12. Size:325K jiejie micro
jmsl1006agq.pdf 

JMSL1006AGQ100V 4.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 110 A RDS(ON) (@ VGS = 10V)4.7 m Pb-free Lead Plating RDS(ON) (@ VGS = 4.5V)5.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified
0.13. Size:1311K jiejie micro
jmsl1009pun.pdf 

100V, 45A, 7.5m N-channel Power SGT MOSFETJMSL1009PUNProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 45 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.1 mWRDS(ON)_Typ(@VGS=4.5V 7.5 mWApplications Load Switch P
0.14. Size:1274K jiejie micro
jmsl1005pc.pdf 

100V, 131A, 4.4m N-channel Power SGT MOSFETJMSL1005PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 131 ARDS(ON)_Typ(@VGS=10V 4.4 mWApplications Load Switch PWM Application Power ManagementDG STO
0.15. Size:1233K jiejie micro
jmsl1009pp.pdf 

100V, 12A, 9.2m N-channel Power SGT MOSFETJMSL1009PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 12 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.6 mWRDS(ON)_Typ(@VGS=4.5V 9.2 mWApplications Load Switch PW
0.16. Size:1241K jiejie micro
jmsl1006pgs.pdf 

100V, 109A, 6.4m N-channel Power SGT MOSFETJMSL1006PGSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 109 ARDS(ON)_Typ(@VGS=10V 4.4 mWApplications RDS(ON)_Typ(@VGS=4.5V 6.4 mW Load Switch PWM Application
0.17. Size:629K jiejie micro
jmsl1008mkq.pdf 

100V, 56A, 9.0m N-channel Power SGT MOSFETJMSL1008MKQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 56 ARDS(ON)_Typ(@VGS=10V 6.5 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 9.0 m AEC-Q101 QualifiedApplications
0.18. Size:1243K jiejie micro
jmsl1009pg.pdf 

100V, 93A, 7.3m N-channel Power SGT MOSFETJMSL1009PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 93 ARDS(ON)_Typ(@VGS=10V 5.6 mWApplications RDS(ON)_Typ(@VGS=4.5V 7.3 mW Load Switch PWM Application Pow
0.19. Size:1289K jiejie micro
jmsl1006pgq.pdf 

100V, 120A, 5.5m N-channel Power SGT MOSFETJMSL1006PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds TestedID(@VGS=10V) 120 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.5 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 5.5 mWApplications
0.20. Size:391K jiejie micro
jmsl1009au.pdf 

JMSL1009AU100V 7.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.6 m RDS(ON)_Typ (@ VGS = 4.5V)9.7 m Halogen-free and RoHS-compliantApplications
0.21. Size:1193K jiejie micro
jmsl1005pk.pdf 

100V, 71A, 5.2m N-channel Power SGT MOSFETJMSL1005PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 71 ARDS(ON)_Typ(@VGS=10V 4.2 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.2 mW Load Switch PWM Application Pow
0.22. Size:1240K jiejie micro
jmsl1006pg.pdf 

100V, 115A, 5.5m N-channel Power SGT MOSFETJMSL1006PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 115 ARDS(ON)_Typ(@VGS=10V 4.3 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.5 mW Load Switch PWM Application P
0.23. Size:1287K jiejie micro
jmsl1009pk.pdf 

100V, 88A, 5.8m N-channel Power SGT MOSFETJMSL1009PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 88 A Pb-free platingRDS(ON)_Typ(@VGS=10V 5.8 mWRDS(ON)_Typ(@VGS=4.5V 7.6 mWApplications Load Switch PWM
0.24. Size:399K jiejie micro
jmsl1009ak.pdf 

JMSL1009AK100V 7.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 78 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.8 m RDS(ON)_Typ (@ VGS = 4.5V)9.9 m Halogen-free and RoHS-compliantApplication
0.25. Size:355K jiejie micro
jmsl1009buq.pdf 

JMSL1009BUQ100V 7.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 76 A RDS(ON)_Typ (@ VGS = 10V)7.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)10.0 m Halogen-free and RoHS-compliant AEC-Q1
0.26. Size:656K jiejie micro
jmsl1008ac jmsl1008ae.pdf 

JMSL1008ACJMSL1008AE100V 6.5mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 6.5 mW RDS(ON)_Typ (@ VGS = 4.5V)8.1 mW Halogen-free and RoHS-compliantApplications
0.27. Size:323K jiejie micro
jmsl1006ak.pdf 

JMSL1006AK100V 5.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 99 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.4 m RDS(ON)_Typ (@ VGS = 4.5V)6.6 m Halogen-free and RoHS-compliantApplications Power
0.28. Size:308K jiejie micro
jmsl1006ag.pdf 

JMSL1006AG100V 4.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 108 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.7 m RDS(ON) (@ VGS = 4.5V)5.9 m Halogen-free and RoHS-compliantApplications Power Managermen
0.29. Size:350K jiejie micro
jmsl1008ap.pdf 

JMSL1008AP100V 7.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON) (@ VGS = 4.5V)9.2 m Halogen-free and RoHS-compliantApplications Power Manager
0.30. Size:1226K jiejie micro
jmsl1009pf.pdf 

100V, 53A, 5.8m N-channel Power SGT MOSFETJMSL1009PFProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 53 ARDS(ON)_Typ(@VGS=10V 5.8 mWApplications Load Switch PWM Application Power ManagementDG STO-22
0.31. Size:394K jiejie micro
jmsl1009ag.pdf 

JMSL1009AG100V 7.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 77 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.0 m RDS(ON)_Typ (@ VGS = 4.5V)8.9 m Halogen-free and RoHS-compliantApplications
0.32. Size:1205K jiejie micro
jmsl1005pg.pdf 

100V, 128A, 5.3m N-channel Power SGT MOSFETJMSL1005PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 128 ARDS(ON)_Typ(@VGS=10V 4.3 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.3 mW Load Switch PWM Application P
0.33. Size:402K jiejie micro
jmsl1009agq.pdf 

JMSL1009AGQ100V 7.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 80 A RDS(ON)_Typ (@ VGS = 10V)7.0 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)8.9 m Halogen-free and RoHS-compliant AEC-Q10
0.34. Size:352K jiejie micro
jmsl1008akq.pdf 

JMSL1008AKQ100V 6.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.7 m RDS(ON)_Typ (@ VGS = 4.5V)8.5 m Halogen-free and RoHS-compliant AEC-Q10
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History: BSV12
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