A1941 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A1941
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 480 pF
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta: TO-3PN
Búsqueda de reemplazo de transistor bipolar A1941
A1941 Datasheet (PDF)
a1941 c5198.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS A1941 (9TW) PNPC5198 (9TW) NPNTO- 3PN Non IsolatedPlastic PackagePower Amplifier Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise ) VALUEDESCRIPTION SYMBOL UNITCollector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO 160 VEmitter Bas
2sa1941r 2sa1941o.pdf
2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle
2sa1941.pdf
2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle
2sa1941.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sa1941.pdf
PNP so`FU\cOlvso`FU\cOlvso`FU\cOlv so`FU\cOlvSilicon PNP Epitaxial Transistor R2SA1941 APPLICATIONS (u (u (u (u Power Amplifier Applications \ OR YFUT NTyr'` FEATURES NTyr'` NTyr'`
2sa1941b.pdf
RoHS 2SA1941B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP triple diffusion planar transistor-10A/-140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO = -140V (min) 5.450.1 5.450.11.4Complementary to 2SC5198BB C ETO-3P package which can be installed to the
2sa1941 3ca1941.pdf
2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications. 70W 2SC51983DA5198 Features: Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25)
2sa1941t6tl.pdf
2SA1941T6TLSilicon PNP Power TransistorDESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle
2sa1941r 2sa1941o.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1941DESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sa1941.pdf
2SA1941 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage: Vceo=-140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SC5198 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Volta
2sa1941.pdf
isc Silicon PNP Power Transistor 2SA1941DESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA949O | 2SC560
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D