Биполярный транзистор A1941 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: A1941
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 30 MHz
Ёмкость коллекторного перехода (Cc): 480 pf
Статический коэффициент передачи тока (hfe): 55
Корпус транзистора: TO-3PN
A1941 Datasheet (PDF)
a1941 c5198.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS A1941 (9TW) PNPC5198 (9TW) NPNTO- 3PN Non IsolatedPlastic PackagePower Amplifier Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise ) VALUEDESCRIPTION SYMBOL UNITCollector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO 160 VEmitter Bas
2sa1941r 2sa1941o.pdf
2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle
2sa1941.pdf
2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle
2sa1941.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sc5198 2sa1941.pdf
Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltageVCEO
2sa1941.pdf
PNP so`FU\cOlvso`FU\cOlvso`FU\cOlv so`FU\cOlvSilicon PNP Epitaxial Transistor R2SA1941 APPLICATIONS (u (u (u (u Power Amplifier Applications \ OR YFUT NTyr'` FEATURES NTyr'` NTyr'`
2sa1941b.pdf
RoHS 2SA1941B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP triple diffusion planar transistor-10A/-140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO = -140V (min) 5.450.1 5.450.11.4Complementary to 2SC5198BB C ETO-3P package which can be installed to the
2sa1941 3ca1941.pdf
2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications. 70W 2SC51983DA5198 Features: Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25)
2sa1941.pdf
2SA1941Silicon PNP transistorPower Amplifier Applications Complementary to 2SC5198 High collector voltage:VCEO=-140V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicatioof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to d
2sa1941t6tl.pdf
2SA1941T6TLSilicon PNP Power TransistorDESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle
2sa1941r 2sa1941o.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1941DESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sa1941.pdf
2SA1941 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage: Vceo=-140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SC5198 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Volta
2sa1941.pdf
isc Silicon PNP Power Transistor 2SA1941DESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050