Справочник транзисторов. A1941

 

Биполярный транзистор A1941 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: A1941

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 160 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 30 MHz

Ёмкость коллекторного перехода (Cc): 480 pf

Статический коэффициент передачи тока (hfe): 55

Корпус транзистора: TO-3PN

Аналоги (замена) для A1941

 

 

A1941 Datasheet (PDF)

..1. a1941 c5198.pdf Size:335K _cdil

A1941 A1941

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS A1941 (9TW) PNPC5198 (9TW) NPNTO- 3PN Non IsolatedPlastic PackagePower Amplifier Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise ) VALUEDESCRIPTION SYMBOL UNITCollector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO 160 VEmitter Bas

0.1. 2sa1941.pdf Size:157K _toshiba

A1941 A1941

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle

0.2. 2sa1941.pdf Size:196K _jmnic

A1941 A1941

JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

 0.3. 2sa1941.pdf Size:241K _jilin_sino

A1941 A1941

PNP so`FU\cOlvso`FU\cOlvso`FU\cOlv so`FU\cOlvSilicon PNP Epitaxial Transistor R2SA1941 APPLICATIONS (u (u (u (u Power Amplifier Applications \ OR YFUT NTyr'` FEATURES NTyr'` NTyr'`

0.4. 2sa1941b.pdf Size:208K _nell

A1941 A1941

RoHS 2SA1941B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP triple diffusion planar transistor-10A/-140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO = -140V (min) 5.450.1 5.450.11.4Complementary to 2SC5198BB C ETO-3P package which can be installed to the

 0.5. 2sa1941 3ca1941.pdf Size:272K _lzg

A1941 A1941

2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications. 70W 2SC51983DA5198 Features: Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25)

0.6. 2sa1941.pdf Size:221K _inchange_semiconductor

A1941 A1941

isc Silicon PNP Power Transistor 2SA1941DESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app

Другие транзисторы... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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