All Transistors. A1941 Datasheet


A1941 Datasheet, Equivalent, Cross Reference Search

Type Designator: A1941

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 480 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO-3PN

A1941 Transistor Equivalent Substitute - Cross-Reference Search


A1941 Datasheet (PDF)

0.1. 2sa1941.pdf Size:157K _toshiba


2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = -140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle

0.2. a1941 c5198.pdf Size:335K _cdil


Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 (9TW) PNP C5198 (9TW) NPN TO- 3PN Non Isolated Plastic Package Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise ) VALUE DESCRIPTION SYMBOL UNIT Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Bas

 0.3. 2sa1941.pdf Size:196K _jmnic


JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION · ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

0.4. 2sa1941.pdf Size:221K _inchange_semiconductor


isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION ·Low Collector Saturation Voltage- : V =- 2.0V(Min) @I =- 7A CE(sat) C ·Good Linearity of h FE ·Complement to Type 2SC5198 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage app

 0.5. 2sa1941.pdf Size:241K _jilin_sino


PNP so`FU\cOlv so`FU\cOlv so`FU\cOlv so`FU\cOlv Silicon PNP Epitaxial Transistor R 2SA1941 APPLICATIONS (u (u (u (u Power Amplifier Applications \ OR YFU T NTyr'` FEATURES NTyr'` NTyr'`

0.6. 2sa1941b.pdf Size:208K _nell


RoHS 2SA1941B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -10A/-140V/100W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO = -140V (min) 5.45±0.1 5.45±0.1 1.4 Complementary to 2SC5198B B C E TO-3P package which can be installed to the

0.7. 2sa1941 3ca1941.pdf Size:272K _lzg


2SA1941(3CA1941) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于功率放大。 Purpose: Power amplifier applications. 特点:用于 70W 高保真音频功率输出,与 2SC5198(3DA5198)互补。 Features: Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). 极限参数/Absolute maximum ratings(Ta=25℃)

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .


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