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CSD1506N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD1506N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 90 MHz
   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: TO-126

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CSD1506N Datasheet (PDF)

 7.1. Size:227K  cdil
csd1506.pdf

CSD1506N
CSD1506N

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCSD1506TO126 Plastic PackageECBComplementary CSB1065Low Frequency Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >60 VCollector Emitter Voltage (open b

 9.1. Size:1396K  texas
csd15571q2.pdf

CSD1506N
CSD1506N

CSD15571Q2www.ti.com SLPS435 AUGUST 201320-V N-Channel NexFET Power MOSFETsCheck for Samples: CSD15571Q21FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 20 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 2.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 0.66 nCVGS = 4.5V 16 m Pb Free Terminal PlatingRDS(on) Drai

 9.2. Size:1412K  texas
csd15380f3.pdf

CSD1506N
CSD1506N

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD15380F3ZHCSEZ4A MAY 2016REVISED JULY 2017CSD15380F3 20V N FemtoFETMOSFET1 1 CiSS COSSTA = 25C Qg QgdVDS 20 V Qg

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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