CSD1506N Specs and Replacement

Type Designator: CSD1506N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 56

Noise Figure, dB: -

Package: TO-126

 CSD1506N Substitution

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CSD1506N datasheet

 7.1. Size:227K  cdil

 csd1506.pdf pdf_icon

CSD1506N

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CSD1506 TO126 Plastic Package E C B Complementary CSB1065 Low Frequency Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >60 V Collector Emitter Voltage (open b... See More ⇒

 9.1. Size:1396K  texas

 csd15571q2.pdf pdf_icon

CSD1506N

CSD15571Q2 www.ti.com SLPS435 AUGUST 2013 20-V N-Channel NexFET Power MOSFETs Check for Samples CSD15571Q2 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 20 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 2.5 nC Avalanche Rated Qgd Gate Charge Gate to Drain 0.66 nC VGS = 4.5V 16 m Pb Free Terminal Plating RDS(on) Drai... See More ⇒

 9.2. Size:1412K  texas

 csd15380f3.pdf pdf_icon

CSD1506N

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Detailed specifications: CSD1168P, CSD1168Q, CSD13002, CSD1306D, CSD1306E, CSD1306F, CSD1426F, CSD1506, BC327, CSD1506P, CSD1506Q, CSD1506R, CSD1563, CSD1563AN, CSD1563AP, CSD1563AQ, CSD1563N

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