2N6235R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6235R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 275 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 250 pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO66
Búsqueda de reemplazo de transistor bipolar 2N6235R
2N6235R Datasheet (PDF)
2n6235x.pdf
2N6235XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec
2n6235.pdf
2N6235Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 325V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n6235.pdf
isc Silicon NPN Power Transistor 2N6235DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 325V(Min)CEO(SUS)DC Current Gain-: h = 25-125@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V )= 0.5V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f for high-voltage medium pow
Otros transistores... 2N623 , 2N6230 , 2N6231 , 2N6232 , 2N6232-4 , 2N6233 , 2N6234 , 2N6235 , C5198 , 2N624 , 2N6246 , 2N6247 , 2N6248 , 2N6249 , 2N625 , 2N6250 , 2N6251 .
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